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2SJ586

Description
Silicon P Channel MOS FET High Speed Switching
CategoryDiscrete semiconductor    The transistor   
File Size40KB,8 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SJ586 Overview

Silicon P Channel MOS FET High Speed Switching

2SJ586 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.1 A
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance8.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SJ586
Silicon P Channel MOS FET
High Speed Switching
ADE-208-771A (Z)
2nd.Edition.
June 1999
Features
Low on-resistance
R
DS
= 4.1
typ. (V
GS
= -4 V , I
D
= -50 mA)
R
DS
= 6.0
typ. (V
GS
= -2.5 V , I
D
= -50 mA)
2.5 V gate drive device.
Small package (CMPAK)
Outline
CMPAK
3
1
2
D
3
2
G
1. Source
2. Gate
3. Drain
S
1
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