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BAV302-7

Description
Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MICROMELF-2
CategoryDiscrete semiconductor    diode   
File Size57KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

BAV302-7 Overview

Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MICROMELF-2

BAV302-7 Parametric

Parameter NameAttribute value
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.125 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
BAV301 - BAV303
SURFACE MOUNT SWITCHING DIODE
Features
·
·
·
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
Fits on SOD-323 / SOT-23 Footprint
A
B
Mechanical Data
·
·
·
·
·
Case: MicroMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.012 grams (approx.)
Dim
A
B
C
MicroMELF
Min
1.8
1.20
Max
2.0
1.25
1.35Æ Typical
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j
, T
STG
BAV301
120
100
71
BAV302
200
150
106
250
125
1.0
500
300
-65 to +175
BAV303
250
200
141
Unit
V
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
@ Rated DC Blocking Voltage
Junction Capacitance
Reverse Recovery Time
@ T
A
= 25°C unless otherwise specified
Symbol
V
FM
I
RM
C
j
t
rr
Min
¾
¾
¾
¾
Max
1.0
100
15
1.5
50
Unit
V
nA
mA
pF
ns
Test Condition
I
F
= 100mA
T
A
= 25°C
T
A
= 100°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 30mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
DS30013 Rev. C-3
1 of 2
C
D
BAV301-BAV303

BAV302-7 Related Products

BAV302-7 BAV301-7 BAV303-7 BAV302-13
Description Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MICROMELF-2 Rectifier Diode, 1 Element, 0.125A, 120V V(RRM), Silicon, GLASS, MICROMELF-2 Rectifier Diode, 1 Element, 0.125A, 250V V(RRM), Silicon, GLASS, MICROMELF-2 Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MICROMELF-2
Parts packaging code MELF MELF MELF MELF
package instruction O-LELF-R2 GLASS, MICROMELF-2 O-LELF-R2 O-LELF-R2
Contacts 2 2 2 2
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Maximum output current 0.125 A 0.125 A 0.125 A 0.125 A
Package body material GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Maximum power dissipation 0.5 W 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 120 V 250 V 200 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES YES
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location END END END END
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