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BZT52B9V1

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size878KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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BZT52B9V1 Overview

Zener Diode,

BZT52B9V1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.35 W
Nominal reference voltage9.1 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance1.98%
Working test current5 mA
Base Number Matches1
BZT52B SERIES
Technical Data
Data Sheet N1732, Rev. A
BZT52B2V4 - BZT52B43 ZENER DIODES
Features
Planar Die Construction
350mW Power Dissipation on Ceramic PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
Available in Lead Free Version
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon
request
SOD-123
Circuit Diagram
Mechanical Data
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Weight: 0.01 grams(approx)
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Forward Voltage (Note 2) @I
F
=10mA
Power Dissipation(Note 1)
Thermal resistance junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
F
P
D
R
θJA
T
J
T
STG
Value
0.9
350
357
150
-55 to +150
Units
V
mW
C/W
C
C
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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