5772A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
SCOTTSDALE DIVISION
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 10-PIN package for use as steering diodes
protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive
side of the power supply line and to ground (see figure 1). An external TVS diode may
be added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
10-PIN Ceramic
Flat Pack
FEATURES
•
•
•
•
•
•
Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage V
BR
> 60 V at 10
μA
Low Leakage I
R
< 100nA at 40 V
Low Capacitance C < 8.0 pF
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX5772A for a JANTX screen.
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20
μs
MAXIMUM RATINGS
•
•
•
•
•
•
•
Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25
o
C
500 mW Power Dissipation per Package @ 25
o
C (Note 4)
Operating Junction Temperature range –65 to +150
o
C
o
Storage Temperature range of –65 to +150 C
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
Each Diode
Pulsed: P
W
= 100 ms max; duty cycle <20%
o
o
Derate at 2.4 mA/ C above +25 C
o
o
Derate at 4.0 mW/ C above +25 C
MECHANICAL AND PACKAGING
•
•
•
•
10-PIN Ceramic Flat Pack
Weight 0.25 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
Carrier Tubes; 19 pcs (standard)
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25
o
C unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
V
F1
I
F
= 100 mA
(Note 1)
Vdc
MAXIMUM
FORWARD
VOLTAGE
V
F2
I
F
= 500 mA
(Note 1)
Vdc
MAXIMUM
CAPACITANCE
(PIN TO PIN)
MAXIMUM
FORWARD
RECOVERY TIME
t
fr
I
F
= 500 mA
ns
MAXIMUM
REVERSE
RECOVERY TIME
trr
I
F
=
I
R
= 200 mA
i
rr
= 20 mA
R
L
= 100 ohms
ns
5772A
PART
NUMBER
MAXIMUM
REVERSE
CURRENT
I
R1
V
R
= 40 V
μAdc
C
t
V
R
= 0 V
F = 1 MHz
pF
5772A
1
1.5
0.1
8.0
40
20
NOTE 1:
Pulsed: P
W
= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright
©
2007
3-27-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
5772A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
SCOTTSDALE DIVISION
SYMBOLS & DEFINITIONS
Symbol
V
BR
V
F
I
R
C
t
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
WWW .
Microsemi
.C
OM
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+V
CC
)
I/O Port
GND (or -V
CC
)
5772A
Steering Diode Application
FIGURE 1
Copyright
©
2007
3-27-2007
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
stm32/stm8
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