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BUK9E04-40A,127

Description
N-channel TrenchMOS logic level FET TO-262 3-Pin
CategoryDiscrete semiconductor    The transistor   
File Size762KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK9E04-40A,127 Overview

N-channel TrenchMOS logic level FET TO-262 3-Pin

BUK9E04-40A,127 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeTO-262
package instructionTO-262, I2PAK-3
Contacts3
Manufacturer packaging codeSOT226
Reach Compliance Codenot_compliant
Base Number Matches1
BUK9E04-40A
N-channel TrenchMOS logic level FET
Rev. 02 — 3 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 4.3 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
[1]
Min
-
-
-
-
-
-
Typ
-
-
-
3.7
2.9
3.5
Max Unit
40
75
300
5.9
4
4.4
V
A
W
mΩ
mΩ
mΩ
Static characteristics
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