2SK1279
F-V Series
> Features
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
N-channel MOS-FET
500V
0,58Ω
15A
125W
> Outline Drawing
> Applications
- Motor Control
- Inverters
- Choppers
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
I
DR
V
GS
P
D
T
ch
T
stg
Rating
500
15
60
15
±20
125
150
-55 ~ +150
Unit
V
A
A
A
V
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Diode Forward On-Voltage
Reverse Recovery Time
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
V
t
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=10mA
V
DS=
V
GS
V
DS
=500V
T
ch
=25°C
V
GS
=0V
V
GS
=±20V
V
DS
=0V
I
D
=8A
V
GS
=10V
I
D
=8A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V
I
D
=15A
V
GS
=10V
R
GS
=25
Ω
I
F
=I
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
500
2,1
Typ.
3,0
10
10
0,4
13
2000
270
140
30
100
400
160
0,95
150
Max.
4,0
500
100
0,58
3000
400
210
45
150
600
240
1,8
200
Unit
V
V
µA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
7
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
1,0
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
500V
0,58Ω
2SK1279
F-V Series
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
15A
125W
> Characteristics
Typical Output Characteristics
↑
I
D
[A]
1
↑
R
DS(ON)
[Ω]
2
↑
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
R
DS(ON)
[Ω]
4
4
↑
g
fs
[S]
5
↑
V
GS(th)
[V]
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C [nF]
7
↑
V
DS
[V]
8
↑
V
GS
[V]
↑
I
F
[A]
9
V
DS
[V]
→
Q
g
[nC]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
Safe operation area
↑
Z
th(ch-c)
[K/W]
Transient Thermal impedance
↑
P
D
[W]
10
↑
I
D
[A]
12
11
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
Power technology
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