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M59DR032F120N6T

Description
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
Categorystorage    storage   
File Size22KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M59DR032F120N6T Overview

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

M59DR032F120N6T Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time120 ns
startup blockBOTTOM
JESD-30 codeR-PDSO-G48
length18.4 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
typeNOR TYPE
width12 mm

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