DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET which can be
driven by 2.5-V power supply.
The 2SK1399 is driven by low voltage and does not require consideration
of driving current, it is suitable for appliances including VCR cameras and
headphone stereos which need power saving.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
2.8 ± 0.2
1.5
0.65
–0.15
+0.1
0.95
2.9 ± 0.2
2
0.4
+0.1
–0.05
FEATURES
•
Can be driven by a 3.0-V power source
•
Not necessary to consider driving current because of it is high input
impedance
•
Possible to reduce the number of parts by omitting the bias resistor
•
Can be used complementary with the 2SJ185
0.95
1
3
0.3
Marking
0.16
–0.06
+0.1
PART NUMBER
2SK1399
PACKAGE
SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
5
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
50
±7.0
±100
±200
200
150
–55 to +80
–55 to +150
V
V
mA
mA
mW
°C
°C
°C
Gate
Gate
Protection
Diode
Marking: G12
Drain
Electrode
Connection
1.Source
Internal
2.Gate
Diode
3.Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
opt
T
stg
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50 %
Remark
Source
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14770EJ2V0DS00 (2nd edition)
(Previous No.TC-2343)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
0 to 0.1
ORDERING INFORMATION
1.1 to 1.4
1991, 2000
2SK1399
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Drain Cut-off Current
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
TEST CONDITIONS
V
DS
= 50 V, V
GS
= 0 V
V
GS
= ±7.0 V, V
DS
= 0 V
V
DS
= 3.0 V, I
D
= 1.0
µ
A
V
DS
= 3.0 V, I
D
= 10 mA
V
GS
= 2.5 V, I
D
= 10 mA
V
GS
= 4.0 V, I
D
= 10 mA
V
DS
= 3.0 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 3.0 V
I
D
= 20 mA
V
GS(on)
= 3.0 V
R
G
= 10
Ω,
R
L
= 150
Ω
0.9
20
1.2
38
22
14
8
7
3
15
100
30
35
40
20
MIN.
TYP.
MAX.
10
±5.0
1.5
UNIT
µ
A
µ
A
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
5
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
5
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
V
DD
I
D
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
V
GS
V
GS
Wave Form
I
G
= 2 mA
V
GS
(on)
90 %
R
L
V
DD
0
10 %
PG.
90 %
90 %
50
Ω
I
D
0 10 %
10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D14770EJ2V0DS00
2SK1399
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
300
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mW
dT - Derating Factor - %
250
200
150
100
50
0
20
40
60
80
100
120 140 160
0
30
60
90
120 150
180 210
240
T
c
- Case Temperature -
˚C
T
A
- Ambient Temperature -
˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulse measurement
TRANSFER CHARACTERISTICS
100
I
D
- Drain Current - mA
80
V
GS
= 4.5 V
I
D
- Drain Current - mA
60
4.0 V
10
5
40
2.5 V
1
T
A
= 150˚C
75˚C
25˚C
–25˚C
V
DS
= 3.0 V
Pulse measurement
20
0
0
0.5
0.1
1
1.5
2
0.01
0
1
2
3
4
5
6
7
8
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - mS
V
GS(off)
- Gate to Source Cut-off Voltage - V
2.0
1000
500
200
100
50
V
DS
= 3.0 V
I
D
= 1
µA
V
DS
= 5.0 V
f = 1 kHz
1.5
1.0
20
10
1
5
10
20
50 100 200
500 1000
0.5
0
50
100
150
T
ch
- Channel Temperature -
˚C
I
D
- Drain Current - mA
Data Sheet D14770EJ2V0DS00
3
2SK1399
R
DS (on)
- Drain to Source On-State Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
I
D
= 100 mA
20
10 mA
10
Pulse measurement
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
50
Pulse
measurement
V
GS
= 2.5 V
20
4.0 V
10
5
2
1
0
0.6 1
2
5
10 20
60
0
0
1
2
3
4
5
6
7
8
9
10
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
4
Data Sheet D14770EJ2V0DS00
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