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M58BW016FB70T3FF

Description
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
Categorystorage    storage   
File Size412KB,69 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M58BW016FB70T3FF Overview

16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories

M58BW016FB70T3FF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeQFP
package instructionROHS COMPLIANT, PLASTIC, QFP-80
Contacts80
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time70 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PQFP-G80
JESD-609 codee3/e4
length20 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width32
Number of functions1
Number of departments/size8,31
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP80,.7X.9,32
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)245
power supply2.5/3.3,3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3.4 mm
Department size2K,16K
Maximum standby current0.000005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceMATTE TIN/NICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40
switch bitNO
typeNOR TYPE
width14 mm
M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kb x 32, boot block, burst)
3 V supply Flash memories
Features
Supply voltage
– V
DD
= 2.7 V to 3.6 V for Program, Erase
and Read
– V
DDQ
= V
DDQIN
= 2.4 V to 3.6 V for I/O
buffers
– V
PP
= 12 V for Fast Program (optional)
High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state Burst
Read
– Synchronous Burst Read
– Asynchronous Page Read
Hardware block protection
– WP pin for Write Protect of the 4 outermost
parameter blocks and all main blocks
– RP pin for Write Protect of all blocks
Optimized for FDI drivers
– Fast Program / Erase Suspend latency
time < 6 µs
– Common Flash interface
Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
Low power consumption
– 5 µA typical Deep Power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after Asynchronous
Read
Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
ECOPACK
®
packages available
PQFP80 (T)
BGA
LBGA80 10 × 12 mm
October 2007
Rev 14
1/69
www.st.com
1

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