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2SK1443

Description
Power Field-Effect Transistor, 1A I(D), 450V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size96KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SK1443 Overview

Power Field-Effect Transistor, 1A I(D), 450V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN

2SK1443 Parametric

Parameter NameAttribute value
Objectid1445016907
Parts packaging codeTO-220FI
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage450 V
Maximum drain current (Abs) (ID)1 A
Maximum drain current (ID)1 A
Maximum drain-source on-resistance4.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment20 W
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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