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PQ28C256AH-250

Description
EEPROM, 32KX8, 250ns, Parallel, CMOS, PDIP28
Categorystorage    storage   
File Size280KB,8 Pages
ManufacturerLSC/CSI
Websitehttps://lsicsi.com
Download Datasheet Parametric View All

PQ28C256AH-250 Overview

EEPROM, 32KX8, 250ns, Parallel, CMOS, PDIP28

PQ28C256AH-250 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionDIP, DIP28,.6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time250 ns
Other featuresAUTOMATIC WRITE;PAGE WRITE;BULK ERASE
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-PDIP-T28
JESD-609 codee0
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum standby current0.00035 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
Maximum write cycle time (tWC)3 ms
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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