KSA1370F datasheet, PDF - EEWORLD Datasheet

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KSA1370F: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size139KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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KSA1370F Overview

Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN

KSA1370F Parametric

Parameter Name	Attribute value
Parts packaging code	TO-92L
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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KSA1370

PNP EPITAXIAL SILICON TRNSISTOR

CRT DISPLAY, VIDEO OUTPUT

•

High Voltage

•

Low Reverse Transfer Capacitance: C

= 1.7pF

TO-92L

ABSOLUTE MAXIMUM RATINGS (T

=25°C)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

(DC)

(Pulse)

STG

Rating

-200

-5

-100

-200

1.0

150

-55 ~ 150

Unit

°C

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (T

=25°C)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current-Gain-Bandwidth Product

Output Capacitance

Reverse Transfer Capacitance

Symbol

CBO

CEO

EBO

CBO

EBO

(sat)

(on)

Test Condition

= -10µA, I

= -1mA, I

= -10µA, I

= -150V, I

= -4V, I

= -10V, I

= -10mA

= -20mA, I

= -2mA

= -20mA, I

= -2mA

= -30V, I

= -10mA

= -30V, f=1MHz

Min

-200

-5

-0.1

320

-0.6

-1.0

150

2.6

1.7

Typ

Max

Unit

µA

MHz

CLASSIFICATION

Classification

60~120

100~200

160~320

Rev. B

1999 Fairchild Semiconductor Corporation

KSA1370F Related Products

	KSA1370F	KSA1370D	KSA1370E
Description	Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN
Parts packaging code	TO-92L	TO-92L	TO-92L
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	200 V	200 V	200 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	60	100
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz
Base Number Matches	1	1	-

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