FDB302 datasheet, PDF - EEWORLD Datasheet

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FDB302: DescriptionBridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size67KB，1 Pages; ManufacturerDiotec Electronics Corp; Environmental Compliance

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FDB302 Overview

Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon

FDB302 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	S-PUFM-W4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	200 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-30 code	S-PUFM-W4
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	0.00001 µA
Maximum reverse recovery time	0.2 µs
surface mount	NO
Terminal form	WIRE
Terminal location	UPPER
Base Number Matches	1

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DIOTEC ELECTRONICS CORP.

18020 Hobart Blvd., Unit B

Gardena, CA 90248 U.S.A

Tel.: (310) 767-1052 Fax: (310) 767-7958

Data Sheet No. FRDB-300-1B

FEATURES

PRV Ratings from 50 to 1000 Volts

Surge overload rating to 50 Amps peak

Reliable low cost molded plastic construction

Ideal for printed circuit board applications

MECHANICAL SPECIFICATION

ACTUAL SIZE OF

FDB PACKAGE

FDB306

SERIES FDB300 - FDB310

Fast switching for high efficiency

UL RECOGNIZED - FILE #E124962

MECHANICAL DATA

Case: Molded plastic, U/L Flammability Rating 94V-0

Terminals: Round silver plated copper pins

Soldering: Per MIL-STD 202 Method 208 guaranteed

Polarity: Marked on side of case; positive lead at beveled corner

Mounting Position: Any. Through hole provided for #6 screw

Weight: 0.11 Ounces (3.36 Grams)

MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive loads, derate current by 20%.

PARAMETER (TEST CONDITIONS)

Series Number

Maximum DC Blocking Voltage

Maximum RMS Voltage

Maximum Peak Recurrent Reverse Voltage

Average Forward Rectified Current @ T

= 50 C

Peak Forward Surge Current (8.3mS single half sine wave

superimposed on rated load)

Maximum Forward Voltage (Per Diode) at 1.5 Amps DC

Maximum Average DC Reverse Current at Rated

DC Blocking Voltage

Maximum Reverse Recovery Time (Note 1)

Thermal Energy (Rating for Fusing, t < 8.3 mS)

Maximum Thermal Resistance, Junction to Case (Note 2)

Junction Operating and Storage Temperature Range

NOTES: (1) T

=25

C, I

=0.5A, I

=1A, I

=0.25A

(2) Bridge mounted on 4.0" sq. x 0.11" thick (10.5cm sq. x 0.3cm) aluminum plate

SYMBOL

FDB

300

FDB

301

100

RATINGS

FDB

302

200

140

200

FDB

304

400

280

400

1.3

200

2.5

-55 to +150

300

500

FDB

306

600

420

600

FDB

308

800

560

800

FDB

310

1000

700

1000

UNITS

RMS

RRM

FSM

θJC

STG

VOLTS

AMPS

VOLTS

µA

AMPS

SEC

°C/W

°C

3.0103fdb

@ T

= 25

@ T

= 100

FDB302 Related Products

	FDB302	FDB306	FDB300	FDB304	FDB308	FDB310	FDB301
Description	Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon	Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon	Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon	Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon	Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon	Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon	Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	200 V	600 V	50 V	400 V	800 V	1000 V	100 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
JESD-30 code	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	4	4	4	4	4	4	4
Phase	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	600 V	50 V	400 V	800 V	1000 V	100 V
Maximum reverse current	0.00001 µA	0.00001 µA	0.00001 µA	0.00001 µA	10 µA	0.00001 µA	0.00001 µA
Maximum reverse recovery time	0.2 µs	0.3 µs	0.2 µs	0.3 µs	0.5 µs	0.5 µs	0.2 µs
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
package instruction	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	-	S-PUFM-W4
Base Number Matches	1	1	1	1	1	1	-

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