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UZTX753

Description
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size80KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric Compare View All

UZTX753 Overview

Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3

UZTX753 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
Base Number Matches1
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ZTX752
ZTX753
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX752
-100
-80
-5
-6
-2
1
5.7
E-Line
TO92 Compatible
ZTX753
-120
-100
UNIT
V
V
V
A
A
W
mW/°C
°C
Operating and Storage Temperature Range
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
ZTX752
ZTX753
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-100
-80
-5
-0.1
-10
I
EBO
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
-1.25
-1
-120
-100
-5
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-80V
V
CB
=-100V
V
CB
=-80V,
T
amb
=100°C
V
CB
=-100V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
IC=-1A, V
CE
=-2V*
-0.1
-10
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
Emitter Cut-Off
Current
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
V
V
-1.25 V
-1
V
3-260

UZTX753 Related Products

UZTX753
Description Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified? conform to
Parts packaging code TO-92
package instruction CYLINDRICAL, O-PBCY-W3
Contacts 3
Reach Compliance Code not_compliant
ECCN code EAR99
Maximum collector current (IC) 2 A
Collector-emitter maximum voltage 100 V
Configuration SINGLE
Minimum DC current gain (hFE) 25
JEDEC-95 code TO-92
JESD-30 code O-PBCY-W3
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 3
Maximum operating temperature 200 °C
Minimum operating temperature -55 °C
Package body material PLASTIC/EPOXY
Package shape ROUND
Package form CYLINDRICAL
Peak Reflow Temperature (Celsius) 260
Polarity/channel type PNP
Certification status Not Qualified
Guideline CECC
surface mount NO
Terminal surface Matte Tin (Sn)
Terminal form WIRE
Terminal location BOTTOM
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 140 MHz
Base Number Matches 1

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