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CLT4160

Description
Photo Transistor, 840nm, 0.2A I(C)
CategoryLED optoelectronic/LED    photoelectric   
File Size74KB,2 Pages
ManufacturerCLAIREX
Websitehttp://www.clairex.com
Download Datasheet Parametric Compare View All

CLT4160 Overview

Photo Transistor, 840nm, 0.2A I(C)

CLT4160 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Maximum dark power50 nA
JESD-609 codee0
Installation featuresTHROUGH HOLE MOUNT
Maximum on-state current0.2 A
Maximum operating temperature150 °C
peak wavelength840 nm
Maximum power dissipation0.075 W
Maximum response time0.000003 s
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

CLT4160 Related Products

CLT4160 CLT4140
Description Photo Transistor, 840nm, 0.2A I(C) Photo Transistor, 840nm, 0.2A I(C)
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknown unknown
Maximum dark power 50 nA 50 nA
JESD-609 code e0 e0
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Maximum on-state current 0.2 A 0.2 A
Maximum operating temperature 150 °C 150 °C
peak wavelength 840 nm 840 nm
Maximum power dissipation 0.075 W 0.075 W
Maximum response time 0.000003 s 0.000003 s
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1

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