Photo Transistor, 840nm, 0.2A I(C)
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | unknown |
| Maximum dark power | 50 nA |
| JESD-609 code | e0 |
| Installation features | THROUGH HOLE MOUNT |
| Maximum on-state current | 0.2 A |
| Maximum operating temperature | 150 °C |
| peak wavelength | 840 nm |
| Maximum power dissipation | 0.075 W |
| Maximum response time | 0.000003 s |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| CLT4160 | CLT4140 | |
|---|---|---|
| Description | Photo Transistor, 840nm, 0.2A I(C) | Photo Transistor, 840nm, 0.2A I(C) |
| Is it Rohs certified? | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown |
| Maximum dark power | 50 nA | 50 nA |
| JESD-609 code | e0 | e0 |
| Installation features | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT |
| Maximum on-state current | 0.2 A | 0.2 A |
| Maximum operating temperature | 150 °C | 150 °C |
| peak wavelength | 840 nm | 840 nm |
| Maximum power dissipation | 0.075 W | 0.075 W |
| Maximum response time | 0.000003 s | 0.000003 s |
| surface mount | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 | 1 |