2SK1712 datasheet, PDF - EEWORLD Datasheet

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2SK1712: DescriptionMOSFET; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/

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2SK1712 Overview

MOSFET

2SK1712 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220F
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	UL APPROVED
Avalanche Energy Efficiency Rating (Eas)	6.2 mJ
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	15 A
Maximum drain-source on-resistance	0.14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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2SK1712

Absolute Maximum Ratings

Symbol

DSS

GSS

D (pulse)

Tch

Tstg

Ratings

±10

±15

±60

(Tch

150ºC)

(Ta = 25ºC)

External dimensions 1 ...... FM20

Electrical Characteristics

Symbol

(BR) DSS

GSS

DSS

(yfs)

DS (on)

1.0

5.6

8.4

0.12

0.07

Ciss

Coss

off

820

360

100

0.14

0.1

min

±500

250

2.0

Ratings

typ

max

Unit

µA

Ω

(Ta = 25ºC)

Unit

ºC

Conditions

= 250µA, V

= 0V

±10V

= 60V, V

= 0V

= 10V, I

= 250µA

= 10V, I

= 8.0A

= 4V,

= 8.0A

30 (Tc = 25ºC)

6.2

150

–55 to +150

unclamped,

= 10V, I

= 8.0A

= 25V, f = 1.0MHz,

= 0V

= 8A, V

= 30V,

= 10V,

See Figure 2 on Page 5.

: See = 25V, 1 on50µH, 5. = 12A,

Figure

Page

— I

Characteristics

4.5V

3.5V

— I

Characteristics

0.14

= 10V

0.12

0.10

— R

DS (ON)

Characteristics

DS (ON)

(Ω)

(A)

0.08

0.06

0.04

0.02

=10V

= – 55ºC

25ºC

125ºC

= 3V

(V)

(A)

— Re

(yfs)

Characteristics

= – 55ºC

25ºC

125ºC

= 10V

— V

Characteristics

0.17

0.15

— R

DS (ON)

Characteristics

= 8A

DS (ON)

(Ω)

(yfs)

(S)

0.13

0.11

0.09

0.07

0.05

=10V

(V)

15A

= 8A

0.5

0.2

0.03

0.1

0.5 1

10 20

0.03

–50

100

150

(A)

(V)

Tc (ºC)

— Capacitance Characteristics

3000

= 0V

f = 1MHz

— I

Characteristics

100

Safe Operating Area

(pulse) max

max

(Tc = 25ºC)

Ta — P

Characteristics

Capacitance (pF)

1000

500

Ciss

ith

(W)

(A)

Coss

10V

fin

ite

= 0V

0.5

0.3

0.5 1

100

Crss

0.2

0.4

0.6

0.8 1.0 1.2

1.4

Without heatsink

50 100

100

150

(V)

Ta (ºC)

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