2SK1761
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D
G
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SK1761
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
250
±30
12
48
12
75
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
2SK1761
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
250
±30
—
—
2.0
—
5.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.23
8.0
1100
440
68
20
65
100
44
1.0
200
Max
—
—
±10
250
3.0
0.35
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 12 A, V
GS
= 0
I
F
= 12 A, V
GS
= 0,
di
F
/ dt = 100 A /
µs
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 6 A
V
GS
= 10 V*
1
I
D
= 6 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 6 A
V
GS
= 10 V
R
L
= 5
Ω
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3
2SK1761
Maximum Safe Operation Area
Power vs. Temperature Derating
160
100
10
30
Pch (W)
120
µ
s
10
0
Drain Current I
D
(A)
10
D
C
PW
=
1
µs
10
m
s
m
Channel Dissipation
s
(1
O
n
tio
ra
pe
3
1
sh
80
ot
)
c
(T
Ta = 25°C
=
°C
25
)
40
0.3
0.1
1
0
50
100
Case Temperature
150
Tc (°C)
200
Operation in this area
is limited by R
DS
(on)
3
10
30
100
300
1000
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
16
Drain Current I
D
(A)
6V
Pulse Test
5.5 V
Drain Current I
D
(A)
8
10
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
12
5V
8
4.5 V
4
V
GS
= 4 V
6
Tc = 75°C
4
25°C
– 25°C
2
0
12
16
Drain to Source Voltage V
DS
(V)
4
8
20
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
4
2SK1761
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
Drain to Source Saturation Voltage
V
DS
(on) (V)
Pulse Test
Static Drain–Source on State
Resistance R
DS
(on) (
Ω
)
4
2
1
0.5
V
GS
= 10 V
5
Static Drain to Source on State
Resistance vs. Drain Current
3
10 A
2
5A
1
I
D
= 2 A
0.2
15 V
0.1
0
4
8
12
16
20
0.05
0.5
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Temperature
1.0
50
Forward Transfer Admittance
vs. Drain Current
V
DS
= 10 V
Pulse Test
Forward Transfer Admittance
|y
fs
| (S)
20
10
5
75°C
25°C
2
1
Tc = –25°C
Static Drain–Source on State
Resistance R
DS
(on) (
Ω
)
0.8
Pulse Test
V
GS
= 10 V
0.6
I
D
= 10 A
0.4
5A
0.2
2A
0
– 40
0
40
80
120
160
0.5
0.1
0.2
0.5
1
2
5
10
Case Temperature Tc (°C)
Drain Current I
D
(A)
5
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