2SK1809
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D
G
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SK1809
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
600
±30
5
20
5
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
2SK1809
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
600
±30
—
—
2.0
—
3.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
1.1
5.0
1000
250
45
12
45
105
55
0.9
500
Max
—
—
±10
250
3.0
1.5
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 5 A, V
GS
= 0
I
F
= 5 A, V
GS
= 0,
di
F
/ dt = 100 A /
µs
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2.5A
V
GS
= 10 V*
1
I
D
= 2.5 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 2.5 A
V
GS
= 10 V
R
L
= 12
Ω
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
See characteristic curves of 2SK1404
3
2SK1809
Power vs. Temperature Derating
90
Channel Dissipation Pch (W)
50
30
Drain Current I
D
(A)
10
PW
=
10
µ
10
0
Maximum Safe Operation Area
s
µ
s
60
1
3
D
s
m
10
m
C
O
s
(1
1
0.3
0.1
0.05
Operation in this
area is limited
by R
DS
(on)
pe
o
Sh
30
ra
tio
t)
n
(T
c
=
25
Ta = 25°C
1
3
10
30
100
°C
)
0
50
100
150
300
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
10
µ
0.01
1 shot Pulse
100
µ
1m
10 m
Pulse Width PW (S)
100 m
θ
ch – c(t) =
γ
s(t) .
θ
ch – c
θ
ch – c = 2.08°C / W, Tc = 25°C
PW
D= T
P
DM
T
PW
Tc = 25°C
1.0
1
10
4
Unit: mm
11.5 MAX
2.79
±
0.2
10.16
±
0.2
9.5
8.0
φ
3.6
-0.08
+0.1
4.44
±
0.2
1.26
±
0.15
6.4
+0.2
–0.1
18.5
±
0.5
15.0
±
0.3
1.27
2.7 MAX
14.0
±
0.5
1.5 MAX
7.8
±
0.5
0.76
±
0.1
2.54
±
0.5
2.54
±
0.5
0.5
±
0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
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