D73FY4D2 datasheet, PDF - EEWORLD Datasheet

D73FY4D2: Description4000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size91KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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D73FY4D2 Overview

4000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	15 W
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1.5 V
Base Number Matches	1

	D73FY4D2	D73FY4D1
Description	4000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA	4000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA
Is it Rohs certified?	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	4 A	4 A
Collector-emitter maximum voltage	80 V	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000	1000
JEDEC-95 code	TO-252AA	TO-251AA
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power consumption environment	15 W	15 W
Maximum power dissipation(Abs)	15 W	15 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
VCEsat-Max	1.5 V	1.5 V
Base Number Matches	1	1

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