SD212DE datasheet, PDF - EEWORLD Datasheet

SD212DE: DescriptionSmall Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72; CategoryDiscrete semiconductor The transistor; File Size86KB，3 Pages; ManufacturerSignetics

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SD212DE Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknown
Shell connection	SUBSTRATE
Configuration	SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID)	0.05 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.3 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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