2SK2226-01L,S
F-III Series
> Features
-
-
-
-
-
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Forward Transconductance
N-channel MOS-FET
150V
0,08Ω
20A
80W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
GS
=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
150
150
20
80
±20
80
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=150V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±20V
V
DS
=0V
I
D
=10A
V
GS
=4V
I
D
=10A
V
GS
=10V
I
D
=10A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=20A
V
GS
=10V
R
GS
=25Ω
T
ch
=25°C
L=100µH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
150
1,0
Typ.
1,5
10
0,2
10
0,065
0,055
20
2300
330
150
15
20
450
100
1,1
125
0,6
Max.
2,5
500
1,0
100
0,1
0,08
3450
500
230
25
30
700
150
1,5
10
20
Unit
V
V
µA
mA
nA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
125
1,56
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
150V
0,08Ω
2SK2226-01L,S
F-III Series
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
20A
80W
> Characteristics
Typical Output Characteristics
↑
I
D
[A]
1
↑
R
DS(ON)
[Ω]
2
↑
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
R
DS(ON)
[Ω]
4
↑
g
fs
[S]
5
↑
V
GS(th)
[V]
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C [nF]
7
↑
V
DS
[V]
8
↑
V
GS
[V]
↑
I
F
[A]
9
V
DS
[V]
→
Q
g
[nC]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
Safe operation area
Transient Thermal Impedance
↑
P
D
[W]
10
↑
I
D
[A]
12
↑
Z
th(ch-c)
[K/W]
T
c
[°C]
→
V
DS
[V]
→
t [S]
→
This specification is subject to change without notice!
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