2SK2248-01L,S
F-III Series
> Features
-
-
-
-
-
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Forward Transconductance
N-channel MOS-FET
30V
0,06Ω
10A
20W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate Voltage (R
GS
=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
30
30
10
40
±16
20
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=30V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±16V
V
DS
=0V
I
D
=5A
V
GS
=4V
I
D
=5A
V
GS
=10V
I
D
=5A
V
DS
=10V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=10V
I
D
=10A
V
GS
=10V
R
GS
=25
Ω
T
ch
=25°C
L=100µH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
30
1,0
Typ.
1,5
10
0,2
10
0,045
0,035
10
900
600
160
10
15
110
60
1,0
35
0,05
Max.
2,0
500
1,0
100
0,080
0,060
1350
900
240
15
25
170
90
1,5
5
10
Unit
V
V
µA
mA
nA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
6,25
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
30V
0,06Ω
2SK2248-01L,S
F-III Series
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
10A
20W
> Characteristics
Typical Output Characteristics
↑
I
D
[A]
1
↑
R
DS(ON)
[Ω]
2
↑
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
R
DS(ON)
[Ω]
4
4
↑
g
fs
[S]
5
↑
V
GS(th)
[V]
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C [nF]
7
↑
V
DS
[V]
8
↑
V
GS
[V]
↑
I
F
[A]
9
V
DS
[V]
→
Q
g
[nC]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
Safe operation area
Transient Thermal impedance
↑
P
D
[W]
10
↑
I
D
[A]
12
↑
Z
th(ch-c)
[K/W]
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
Microchip MCU
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