Ordering number : EN5315A
N-Channel Silicon MOSFET
2SK2349
High-Voltage, High-Speed
Switching Applications
Features
• Low ON resistance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2349]
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
1 : Gate
2 : Drain
3 : Source
SANYO: TO-3JML
PW≤10µs, duty cycle≤1%
Tc=25°C
Ratings
1500
±30
10
20
4.6
160
150
–55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to Source Leak Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
VDS=1500V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=5A
ID=5A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Ratings
min
1500
typ
max
1.0
±100
3.5
4.0
1.5
2900
400
200
2.5
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
1.5
2.0
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5315-1/4
2SK2349
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Symbol
td(on)
tr
td(off)
tf
VSD
trr
Conditions
Ratings
min
typ
45
150
800
200
1.0
max
Unit
ns
ns
ns
ns
V
µs
ID=5A, VGS=10V,
VDD=200V, RGS=50Ω
IS=10A, VGS=0
IS=10A, di/dt=100A/µs
1.5
2.0
Switching Time Test Circuit
10
I
D
- V
DS
6V
5V
4.5V
20
I
D
- V
DS
V
G
1
S
=
0V
6V
8
16
Drain Current, I
D
– A
6
V
G
0
=1
S
V
Drain Current, I
D
– A
12
5V
4V
4
8
2
3.5V
4V
4
3V
0
0
4
8
12
16
20
0
0
10
20
30
40
3V
50
16
Drain-to-Source Voltage, V
DS
– V
I
D
- V
GS
V
DS
= 20V
20
Drain-to-Source Voltage, V
DS
– V
I
D
- Tc
V
G S
= 10V
Tc=-25
°C
16
Drain Current, I
D
– A
25°C
Drain Current, I
D
– A
12
75°C
8
12
V
D
8
S
=2
0V
4
10V
4
0
0
2
4
6
8
10
12
14
0
-80
-40
Gate-to-Source Voltage, V
GS
– V
Case Temperature, Tc –
°C
0
40
80
120
160
No.5315-2/4
2SK2349
3.6
3.2
V
GS(off)
- Tc
V
DS
=10V
I
D
=1mA
3
2
SW Time - I
D
V
DD
=200V
V
GS
=10V
P.W. = 1µs
D.C.≤0.5%
Switching Time, SW Time – ns
Cutoff Voltage, V
GS(off)
– V
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
-80
-40
0
40
80
120
160
1000
7
5
3
2
100
7
5
3
2
7 0.1
2
3
5
7 1.0
t d(off)
tf
tr
t d(on)
2
3
5
7 10
2
2.6
Case Temperature, Tc –
°C
R
DS(on)
- V
GS
I
D
=5A
Tc=25°C
4.0
Drain Current, I
D
– A
R
DS(on)
- Tc
I
D
=5A
Static Drain-to-Source
ON-State Resistance, R
DS (
on
)
–
Ω
Static Drain-to-Source
ON-State Resistance, R
DS (
on
)
–
Ω
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
-80
-40
0
40
80
120
160
2.2
1.8
V
D
=1
S
0V
20
V
1.4
1.0
0
2
4
6
Gate-to-Source
3
10
Voltage, V
GS
–
8
12
14
V
Tc =25°C
2
Case Temperature, Tc –
°C
| y
f s
| - I
D
Forward Transfer Admittance, | y
fs
| – S
| y
fs
| - I
D
V
D S
=20V
V
G S
=10V
25
°
C
Forward Transfer Admittance, | y
fs
| – S
2
10
7
5
10
7
5
3
2
V
DS
=10V
20V
–
Tc=
25
°
C
3
2
1.0
7
5
3
2
7 0.1
2
3
5
7 1.0
2
3
C
75
°
1.0
7
5
3
2
7 0.1
2
3
5
7 1.0
2
3
5
7
10
2
5
7 10
2
3
Drain Current, I
D
– A
2
10000
7
Drain Current, I
D
– A
V
G S
=0
f= 1MHz
5
Ciss,Coss,Crss - V
DS
ASO
10µs
Ciss,Coss,Crss – pF
5
3
2
1000
7
5
3
2
100
Drain Current, I
D
– A
Ciss
,,,,,,,,,
,,,,,,,,,
I
D
10
,,,,,,,,,
,,,,,,,,,
7
,,,,,,,,,
5
,,,,,,,,,
3
3
I
DP
2
2
1.0
Operation in this area
7
is limited by R
DS
(on).
5
3
2
0.1
Tc =25°C
7
Single pulse
5
2
3
10
10
1m
10
ms
s
0
µ
s
DC
op
10
er
ati
0m
s
on
Coss
Crss
0
4
8
12
16
20
24
28
32
5
7 100
2
3
5
7 1000
2
Drain-to-Source Voltage, V
DS
– V
Drain-to-Source Voltage, V
DS
– V
No.5315-3/4
2SK2349
5
P
D
- Ta
Allowable Power Dissipation, P
D
– W
200
P
D
- Tc
Allowable Power Dissipation, P
D
– W
4.6
4
160
3
No
he
at
120
sin
k
2
80
1
40
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta –
°C
Case Temperature, Ta –
°C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1997. Specifications and information herein are subject to
change without notice.
No.5315-4/4
京公网安备 11010802033920号
EEWORLD
