2SK2216
Silicon N-Channel MOS FET
ADE-208-346A
2nd. Edition
Application
UHF power amplifier
Features
•
High power output, high gain, high efficiency
PG = 9.7 dB, Pout = 140 W,
ηD
= 55% typ (f = 860 MHz)
•
Compact package
Suitable for push - pull circuit
Outline
2SK2216
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. Value at T
C
= 25°C
Symbol
V
DSS
V
GSS
I
D
Pch*
1
Tch
Tstg
Ratings
60
±10
20
150
150
–55 to +150
Unit
V
V
A
W
°C
°C
Electrical Characteristics
(T
C
= 25°C)
Item
Drain leakage current*
1
Gate leakage current*
1
Gate to source cutoff voltage*
1
Drain to source voltage*
1
Forward transfer admittance*
1
Input capacitance*
1
Output capacitance*
1
Output power
Drain efficiency
Notes: 1. Shows / unit FET
2. Pulse Test
Symbol Min
I
DSS
I
GSS
V
GS(off)
V
DS(on)
|y
fs
|
Ciss
Coss
P
OUT
ηD
—
—
0.3
—
3.0
—
—
100
—
Typ
—
—
—
1.2
4.0
250
85
140
55
Max
1
±3
1.6
2.5
—
—
—
—
—
Unit
mA
µA
V
V
S
pF
pF
W
%
Test conditions
V
DS
= 60 V, V
GS
= 0
V
GS
= ± 10 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 5 A*
2
V
DS
= 10 V, I
D
= 5 A*
2
V
GS
= 5 V, V
DS
= 0
f = 1MHz
V
DS
= 10V, V
GS
= 0
f = 1MHz
V
DS
= 28 V, I
DO
= 0.4 A
f = 860 MHz, Pin = 15 W
2
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