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M24256-BFDW6TP/K

Description
32KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, ROHS COMPLIANT, TSSOP-8
Categorystorage    storage   
File Size469KB,41 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
Download Datasheet Parametric View All

M24256-BFDW6TP/K Overview

32KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, ROHS COMPLIANT, TSSOP-8

M24256-BFDW6TP/K Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instructionROHS COMPLIANT, TSSOP-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Spare memory width1
Maximum clock frequency (fCLK)0.4 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
I2C control byte1010DDDR
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.4 mm
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count32768 words
character code32000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply1.8/5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Serial bus typeI2C
Maximum standby current0.000001 A
Maximum slew rate0.005 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.7 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature10
width3 mm
Maximum write cycle time (tWC)5 ms
write protectHARDWARE
Base Number Matches1
M24256-BF M24256-BR M24256-BW
M24256-DR
256 Kbit serial I²C bus EEPROM
with three Chip Enable lines
Features
Compatible with all I
2
C bus modes:
– 1 MHz Fast-mode Plus
– 400 kHz Fast mode
– 100 kHz Standard mode
Memory array:
– 256 Kb (32 Kbytes) of EEPROM
– Page size: 64 bytes
M24xxx- DR: additional Write lockable Page
(Identification page)
Single supply voltage:
– 1.7 V to 5.5 V
– 1.8 V to 5.5 V
– 2.5 V to 5.5 V
Noise suppression
– Schmitt trigger inputs
– Input noise filter
Write
– Byte write within 5 ms
– Page write within 5 ms
Random and sequential read modes
Write protect of the whole memory array
Enhanced ESD/latch-up protection
More than 1 million write cycles
More than 40-year data retention
Packages
– ECOPACK
(RoHS compliant and
halogen-free)
UFDFPN8 (MB)
2 × 3 mm (MLP)
SO8 (MN)
150 mils width
TSSOP8 (DW)
WLCSP (CS)
July 2011
Doc ID 6757 Rev 24
1/41
www.st.com
1
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