2SK2469-01MR
FAP-II Series
> Features
-
-
-
-
-
-
-
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
V
GS
= ± 30V Guarantee
Avalanche Proof
N-channel MOS-FET
300V
1Ω
5A
30W
> Outline Drawing
> Applications
-
-
-
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage(R
GS
=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
300
300
5
20
±30
30
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=300V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±30V
V
DS
=0V
I
D
=2,5A
V
GS
=10V
I
D
=2,5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=150V
I
D
=5A
V
GS
=10V
R
GS
=10
Ω
L=100µH
T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
300
3,5
Typ.
4,0
10
0,2
10
0,6
3
500
120
60
10
20
30
15
1,1
180
1,5
Max.
4,5
500
1,0
100
1,0
750
180
90
15
30
45
25
1,7
1,5
5
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
4,17
Unit
°C/W
°C/W
N-channel MOS-FET
300V
1Ω
2SK2469-01MR
FAP-II Series
Drain-Source On-State Resistance
R
DS(on)
= f(T
ch
); I
D
=2,5A; V
GS
=10V
5A
30W
> Characteristics
Typical Output Characteristics
I
D
=f(V
DS
); 80µs pulse test; T
C
=25°C
Typical Transfer Characteristics
I
D
=f(V
GS
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
[A]
↑
1
R
DS(ON)
[Ω]
↑
2
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance
R
DS(on)
=f(I
D
); 80µs pulse test; T
C
=25°C
Typical Transconductance
g
fs
=f(I
D
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
DS(ON)
[Ω]
↑
g
fs
[S]
↑
5
V
GS(th)
[V]
4
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristics
V
GS
=f(Qg); I
D
=5A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80µs pulse test
↑
C [pF]
↑
V
DS
[V]
↑
V
GS
[V]
↑
I
F
[A]
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Power Dissipation
P
D
=f(Tc)
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
Z
th(ch-c)
[K/W]
↑
Transient Thermal impedance
Z
thch-c
=f(t) parameter:D=t/T
↑
P
D
[W]
10
↑
I
D
[A]
12
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
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