2SK2646-01
FAP-IIS Series
> Features
-
-
-
-
-
-
-
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
V
GS
= ± 30V Guarantee
Repetitive Avalanche Rated
N-channel MOS-FET
800V
4Ω
4A
80W
> Outline Drawing
> Applications
-
-
-
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (
T
C
=25°C),
unless otherwise specified
> Equivalent Circuit
Rating
800
4
16
±30
4
254
80
150
-55 ~ +150
Unit
V
A
A
V
A
mJ
W
°C
°C
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
ch
≤
150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AS
P
D
T
ch
T
stg
- Electrical Characteristics (T
C
=25°C),
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=800V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±30V
V
DS
=0V
I
D
=2A
V
GS
=10V
I
D
=2A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V
I
D
=2A
V
GS
=10V
R
GS
=10
Ω
T
ch
=25°C
L = 100µH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
800
3,5
Typ.
4,0
10
0,2
10
3,19
2
450
75
40
20
40
50
25
1,0
450
3,0
Max.
4,5
500
1,0
100
4,0
4
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
75
1,56
Unit
°C/W
°C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
800V
4Ω
2SK2646-01
FAP-IIS Series
Drain-Source-On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
): ID=2A; VGS=10V
4A
80W
> Characteristics
Typical Output Characteristics
I
D
=f(V
DS
); 80µs pulse test; T
C
=25°C
Typical Transfer Characteristics
I
D
=f(V
GS
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
[A]
↑
R
DS(ON)
[Ω]
↑
2
I
D
[A]
1
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80µs pulse test;T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
DS(ON)
[Ω]
↑
g
fs
[S]
↑
5
V
GS(th)
[V]
4
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
cc
=80V; I
AV
=4A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80µs pulse test; V
GS
=0V
↑
C [F]
↑
7
E
AS
[mJ]
↑
V
GS
[V]
↑
I
F
[A]
8
9
V
DS
[V]
→
Starting T
ch
[°C]
→
V
SD
[V]
→
Power Dissipation
P
D
=F(T
C
)
Safe operation area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
th(ch-c)
[K/W]
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
P
D
[W]
10
↑
I
D
[A]
12
T
C
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
Embedded System
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