2SK2690-01
FAP-IIIB Series
> Features
-
-
-
-
-
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
Avalanche Rated
N-channel MOS-FET
60V
0,01Ω
80A
125W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
60
80
320
±20
599
125
150
-55 ~ +150
* L=0,125mH, V
CC
=24V
> Equivalent Circuit
Unit
V
A
A
V
mJ*
W
°C
°C
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=60V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±20V
V
DS
=0V
I
D
=40A
V
GS
=4V
V
GS
=10V
I
D
=40A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=75A
V
GS
=10V
R
GS
=10
Ω
T
ch
=25°C
L = 100µH
I
F
=160A V
GS
=0V T
ch
=25°C
I
F
=80A V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
60
1,0
Typ.
1,5
10
0,2
10
0,012
0,0075
55
3500
1250
360
15
75
190
110
1,15
75
0,17
Max.
2,0
500
1,0
100
0,017
0,01
5250
1870
540
23
120
285
165
1,65
120
25
80
Unit
V
V
µA
mA
nA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
1,0
Unit
°C/W
°C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
60V
0,01Ω
2SK2690-01
FAP-IIIB Series
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=40A; V
GS
=10V
80A
125W
> Characteristics
Typical Output Characteristics
I
D
=f(V
DS
); 80µs pulse test; T
C
=25°C
Typical Transfer Characteristics
I
D
=f(V
GS
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
[A]
↑
R
DS(ON)
[mΩ]
↑
2
I
D
[A]
1
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80µs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
DS(ON)
[mΩ]
↑
g
fs
[S]
↑
5
V
GS(th)
[V]
4
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristic
V
GS
=f(Qg); I
D
=80A; T
C
=25°C
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80µs pulse test; T
ch
=25°C
↑
C [F]
↑
V
DS
[V]
↑
V
GS
[V]
↑
I
F
[A]
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Maximum Avalanche Energy vs. starting T
ch
E
AV
=f(starting T
ch
): V
CC
=24V; I
AV
≤
80A
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
th(ch-c)
[K/W]
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
E
AV
[mJ]
10
↑
I
D
[A]
12
starting T
ch
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
N-channel MOS-FET
60V
0,01Ω
2SK2690-01
FAP-IIIB Series
Power Dissipation
P
D
=f(T
C
)
80A
125W
> Characteristics
125
100
P
D
/ P
Dmax
[%]
75
50
25
0
0
25
50
75
T
C
[°C]
100
125
150
Maximum Avalanche Current vs. starting T
ch
I
AV
=f(starting T
ch
)
120
100
80
I
AV
/ I
AVmax
[%]
60
40
20
0
0
25
50
75
starting T
ch
[°C]
100
125
150
This specification is subject to change without notice!
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