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BC550AB1G

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN,
CategoryDiscrete semiconductor    The transistor   
File Size248KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BC550AB1G Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN,

BC550AB1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)110
JESD-609 codee3
Humidity sensitivity level1
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BC546A/B/C ~ BC550A/B/C
Taiwan Semiconductor
Small Signal Product
NPN Transistor
FEATURES
- For switching and AF amplifier applications
- These types are subdivided into three groups A, B
and C according to their current gain
- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Total Power dissipation
BC546
Collector-Base Voltage
BC547, BC550
BC548, BC549
BC546
Collector-Emitter Voltage
BC547, BC550
BC548, BC549
BC546
Emitter-Base Voltage
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
PARAMETER
BC546
Collector-Base Breakdown Voltage
BC547, BC550
BC548, BC549
BC546
Collector-Emitter Breakdown Voltage
BC547, BC550
BC548, BC549
BC546
Emitter-Base Breakdown Voltage
Collector Base Cutoff Current
Emitter Base Cutoff Current
DC Current Gain
BC547, BC550
BC548, BC549
V
CB
= 30V
V
EB
= 5 V
Current Gain Group: A
V
CE
= 5V,
B
I
C
= 2mA
C
I
CBO
I
EBO
h
FE
I
E
= 100μA
V
(BR)EBO
I
C
= 10mA
V
(BR)CEO
I
C
= 100μA
V
(BR)CBO
BC547, BC550
BC548, BC549
I
C
I
CM
T
J
, T
STG
SYMBOL
MIN
80
50
30
65
45
30
6
6
6
-
-
110
200
420
15
100
220
450
800
V
nA
nA
-
V
-
V
-
V
V
EBO
V
CEO
V
CBO
SYMBOL
P
TOT
VALUE
500
80
50
30
65
45
30
6
6
6
100
200
-65 to + 150
MAX
mA
mA
°C
UNIT
V
V
UNIT
mW
V
Document Number: DS_S1405001
Version: B14

BC550AB1G Related Products

BC550AB1G BC546CB1G BC547AB1G BC549AB1G BC550BA1G BC550BB1G
Description Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single Single
Minimum DC current gain (hFE) 110 420 110 110 200 200
JESD-609 code e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
surface mount NO NO NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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