MT4LSYT6472B2G-11L datasheet, PDF

MT4LSYT6472B2G-11L: DescriptionSRAM Module, 64KX72, 11ns, CMOS; Categorystorage storage; File Size332KB，7 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT4LSYT6472B2G-11L Overview

SRAM Module, 64KX72, 11ns, CMOS

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	11 ns
Other features	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE
JESD-30 code	R-XDMA-N160
memory density	4718592 bit
Memory IC Type	SRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	160
word count	65536 words
character code	64000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX72
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Minimum standby current	2 V
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL
Base Number Matches	1

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Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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