MT18HTS51272CHY-53EXX datasheet, PDF

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MT18HTS51272CHY-53EXX: DescriptionDDR DRAM Module, 512MX72, CMOS, LEAD FREE, MO-274, SODIMM-200; Categorystorage storage; File Size409KB，23 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT18HTS51272CHY-53EXX Overview

DDR DRAM Module, 512MX72, CMOS, LEAD FREE, MO-274, SODIMM-200

MT18HTS51272CHY-53EXX Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SODIMM
package instruction	DIMM,
Contacts	200
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XZMA-N200
JESD-609 code	e4
length	67.75 mm
memory density	38654705664 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	200
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512MX72
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	3.8 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	30
width	30 mm
Base Number Matches	1

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2GB, 4GB (x72, DR) 200-Pin DDR2 SDRAM SOCDIMM

Features

DDR2 SDRAM SOCDIMM

MT18HTS25672CHY – 2GB

MT18HTS51272CHY – 4GB

Features

•

200-pin, small-outline clocked dual in-line memory

module (SOCDIMM)

•

Fast data transfer rates: PC2-4200 or PC2-5300

•

2GB (256 Meg x 72) or 4GB (512 Meg x 72)

•

Supports ECC error detection and correction

•

= V

DDQ

= 1.8V

•

DDSPD

= 3.0–3.6V

•

JEDEC-standard 1.8V I/O (SSTL_18-compatible)

•

Differential data strobe (DQS, DQS#) option

•

4n-bit prefetch architecture

•

Multiple internal device banks for concurrent opera-

tion

•

Programmable CAS latency (CL)

•

Posted CAS additive latency (AL)

•

WRITE latency = READ latency - 1

•

Programmable burst lengths (BL): 4 or 8

•

Adjustable data-output drive strength

•

64ms, 8192-cycle refresh

•

On-die termination (ODT)

•

Serial presence detect (SPD) with EEPROM

•

Phase-lock loop (PLL) to reduce system clock line

•

Gold edge contacts

•

Dual rank, TwinDie™ (2COB) DRAM devices

•

C temperature sensor

Table 1: Key Timing Parameters

Speed

Grade

-667

-53E

Industry

Nomenclature

PC2-5300

PC2-4200

Data Rate (MT/s)

CL = 5

667

–

CL = 4

553

CL = 3

400

RCD

Figure 1: 200-Pin SOCDIMM (MO-274 R/C C)

Module height 30.0mm (1.18in)

Options

•

Operating temperature

–

Commercial (0°C

≤

+70°C)

–

Industrial (–40°C

≤

+85°C)

•

Package

–

200-pin DIMM (lead-free)

•

Frequency/CL

–

3.0ns @ CL = 5 (DDR2-667)

–

3.75ns @ CL = 4 (DDR2-533)

Notes:

Marking

None

-667

-53E

1. Contact Micron for industrial temperature

module offerings

2. CL = CAS (READ) latency.

(ns)

PDF: 09005aef8253e3ea

hts18c256_512x72ch.pdf - Rev. D 3/10 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

MT18HTS51272CHY-53EXX Related Products

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Description	DDR DRAM Module, 512MX72, CMOS, LEAD FREE, MO-274, SODIMM-200	DDR DRAM Module, 256MX72, CMOS, LEAD FREE, MO-274, SODIMM-200	DDR DRAM Module, 512MX72, CMOS, LEAD FREE, MO-274, SODIMM-200	DDR DRAM Module, 512MX72, CMOS, LEAD FREE, MO-274, SODIMM-200	DDR DRAM Module, 512MX72, CMOS, LEAD FREE, MO-274, SODIMM-200	DDR DRAM Module, 256MX72, CMOS, LEAD FREE, MO-274, SODIMM-200	DDR DRAM Module, 256MX72, CMOS, LEAD FREE, MO-274, SODIMM-200	DDR DRAM Module, 256MX72, CMOS, LEAD FREE, MO-274, SODIMM-200	DDR DRAM Module, 512MX72, CMOS, LEAD FREE, MO-274, SODIMM-200
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM
package instruction	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	LEAD FREE, MO-274, SODIMM-200	DIMM,
Contacts	200	200	200	200	200	200	200	200	200
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200	R-XZMA-N200
JESD-609 code	e4	e4	e4	e4	e4	e4	e4	e4	e4
length	67.75 mm	67.75 mm	67.75 mm	67.75 mm	67.75 mm	67.75 mm	67.75 mm	67.75 mm	67.75 mm
memory density	38654705664 bit	19327352832 bit	38654705664 bit	38654705664 bit	38654705664 bit	19327352832 bit	19327352832 bit	19327352832 bit	38654705664 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	200	200	200	200	200	200	200	200	200
word count	536870912 words	268435456 words	536870912 words	536870912 words	536870912 words	268435456 words	268435456 words	268435456 words	536870912 words
character code	512000000	256000000	512000000	512000000	512000000	256000000	256000000	256000000	512000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	85 °C	70 °C	85 °C	85 °C	70 °C	70 °C
organize	512MX72	256MX72	512MX72	512MX72	512MX72	256MX72	256MX72	256MX72	512MX72
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm	3.8 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG
Maximum time at peak reflow temperature	30	30	30	30	30	30	30	30	30
width	30 mm	30 mm	30 mm	30 mm	30 mm	30 mm	30 mm	30 mm	30 mm
Maker	-	Micron Technology	-	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology

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