RN2410(TE85R2) datasheet, PDF - EEWORLD Datasheet

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RN2410(TE85R2): DescriptionTRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size323KB，5 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2410(TE85R2) Overview

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal

RN2410(TE85R2) Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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RN2410,RN2411

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2410, RN2411

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1410, RN1411

Unit: mm

Equivalent Circuit

Absolute Maximum Ratings

(Ta = 25°C)

Characterisstic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

−50

−5

−100

200

150

−55~150

Unit

°C

JEDEC

TO-236MOD

EIAJ

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g

Electrical Characteristics

(Ta

25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Translation frequency

Collector output capacitance

Input resistor

RN2410

RN2411

Symbol

CBO

EBO

CE (sat)

Test

Circuit

―

Test Condition

−50

V, I

= 0

−5

V, I

= 0

−5

V, I

−1

−5

mA, I

−0.25

−10

V, I

−5

−10

V, I

= 0, f = 1 MHz

―

Min

―

120

―

3.29

Typ.

―

−0.1

200

4.7

Max

−100

400

−0.3

―

6.11

Unit

―

MHz

kΩ

2006-03-14

RN2410(TE85R2) Related Products

	RN2410(TE85R2)	RN2410(TE85R)	RN2410(TE85L)	RN2410(TE85L2)
Description	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purpose Small Signal
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120	120	120	120
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz

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