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RN5002

Description
TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size211KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

RN5002 Overview

TRANSISTOR 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal

RN5002 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment1 W
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max0.5 V
Base Number Matches1
RN5002
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN5002
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Small flat package
P
C
= 1∼2W (mounted on ceramic substrate)
Complementary to RN6002
Unit: mm
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 0.05g
SC-62
2-5K1A
Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
Rating
30
30
5
2
0.4
500
1000
150
−55~150
Unit
V
V
V
A
A
mW
mW
°C
°C
Marking
*
: Mounterd on ceramic substrate (250mm
2
×
0.8t)
1
2001-06-07

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