2SK2922
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-675(Z)
1st. Edition
Aug. 1998
Features
•
High power output, High gain, High efficiency
PG = 8.0dB, Pout = 31dBm,
ηD
= 57 %min. (f = 836.5MHz)
•
Compact package capable of surface mounting
Outline
UPAK
3
2
1
4
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
2SK2922
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Pch
Note2
Tch
Tstg
Ratings
10
±6
0.7
1.4
3
150
–45 to +150
Unit
V
V
A
A
W
°C
°C
1. PW
≤
10ms, duty cycle
≤
50 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
—
—
0.4
—
—
31
57
Typ
—
—
—
27
13
—
—
Max
100
±5.0
1.2
—
—
—
—
Unit
µA
µA
V
pF
pF
dBm
%
Test Conditions
V
DS
= 10 V, V
GS
= 0
V
GS
=
±6V,
V
DS
= 0
I
D
= 3mA, V
DS
= 5V
V
GS
= 2V, V
DS
= 0, f = 1MHz
V
DS
= 5, V
GS
= 0, f = 1MHz
V
DS
= 4.7V, f =836.5Mhz
Pin = 23dBm
V
DS
= 4.7V, f =836.5Mhz
Pin = 23dBm
Zero gate voltage drain current I
DSS
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Output capacitance
Output Power
Drain Rational
Note:
1. Marking is “HX”.
I
GSS
V
GS(off)
Ciss
Coss
Pout
ηD
2
2SK2922
Main Characteristics
Maximum Channel Power
Dissipation Curve
Pch (W)
4
5
Typical Output Characteristics
Pulse Test
6V
5.5 V
5V
4.5 V
Channel Power Dissipation
I
D
(A)
3
4
3
4V
3.5 V
Drain Current
2
2
3V
2.5 V
1
1
1.5 V
2V
V
GS
= 1 V
0
50
100
150
Tc (°C)
200
0
Case Temperature
6
2
3
4
5
1
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Forward Transfer Admittance |y fs | (S)
1.0
Tc = –25°C
25°C
0.6
75°C
10
3
1
Forward Transfer Admittance
vs. Drain Current
(A)
0.8
25°C
Tc = –25°C
Drain Current
I
D
0.3
0.1
75°C
0.4
0.2
V
DS
= 5 V
Pulse Test
0.5
1.0
1.5
2.0
V
GS
(V)
2.5
0.03
0.01
0.001 0.003
0.01
0.3
V
DS
= 5 V
Pulse Test
0.1
0.3
1
0
Gate to Source Voltage
Drain Current I
D
(A)
3
2SK2922
Drain to Source Saturation Voltage
vs. Drain Current
1.0
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Drain to Source Saturation Voltage
V
DS(sat)
(V)
1
0.3
0.1
Gate to Source Cutoff Voltage vs.
Ambient Temperature
25°C
0.8
I
D
=
10 m
A
1 mA
0.1
mA
75°C
0.6
0.03
0.01
Tc = –25°C
0.4
0.003
0.001
0.001 0.003 0.01 0.03
0.2
0
–25
V
DS
= 5 V
0
25
50
75
100
125
V
GS
= 6 V
Pulse Test
0.1
0.3
1
Drain Current I
D
(A)
Ambient Temperature Ta (°C)
Input Capacitance vs.
Gate to Source Voltage
35
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)
Output Capacitance vs.
Drain to Source Voltage
100
50
V
GS
= 0
f = 1 MHz
30
20
10
5
25
20
V
DS
= 0
f = 1 MHz
15
–6
–2
0
2
4
6
–4
Gate to Source Voltage V
GS
(V)
2
1
0.1
0.2
0.5
1
2
5
10
Drain to Source V
DS
(V)
4
2SK2922
Reverse Transfer Capacitance vs.
Drain to Gate Votage
10
V
GS
= 0
f = 1 MHz
5
Output Power Po (W)
2.0
2.5
η
D
Po
1.5
Output Power, Drain Rational
vs. Input Power
100
Reverse Transfer Capacitance Crss (pF)
60
1.0
V
DS
= 4.7 V
I
DO
= 150 mA
f = 836.5MHz
100
200
300
400
40
2
0.5
20
1
0.1
0.2
0.5
1
2
5
10
0
0
500
Drain to Gate Voltege V
DG
(V)
Input power Pin (mW)
Drain Rational
η
D
(%)
80
5
京公网安备 11010802033920号
EEWORLD
