SF10HGT datasheet, PDF - EEWORLD Datasheet

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SF10HGT: Description1A, 500V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size84KB，2 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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SF10HGT Overview

1A, 500V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2

SF10HGT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Parts packaging code	DO-41
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-41
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	500 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	40
Base Number Matches	1

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SF10AG - SF10JG

1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER

SPICE MODELS: SF10AG SF10BG SF10CG

SF10DG SF10FG SF10GG SF10HG SF10JG

Features

·

Glass Passivated Die Construction

Diffused Junction

Super-Fast Switching for High Efficiency

High Current Capability and Low Forward

Voltage Drop

Surge Overload Rating to 30A Peak

Low Reverse Leakage Current

Plastic Material: UL Flammability

Classification Rating 94V-0

A

B

A

C

D

Mechanical Data

·

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Marking: Type Number

Weight: 0.3 grams (approx.)

Mounting Position: Any

Dim

A

B

C

D

DO-41

Min

25.40

4.06

0.71

2.00

Max

¾

5.21

0.864

2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

@ T

A

= 75°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

(JEDEC Method)

Forward Voltage

Peak Reverse Current

at Rated DC Blocking Voltage

Reverse Recovery Time (Note 3)

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

@ I

F

= 1.0A

@ T

A

= 25°C

@ T

A

= 100°C

Symbol

V

RRM

V

RWM

V

R

V

R(RMS)

I

O

I

FSM

V

FM

I

RM

t

rr

C

j

R

qJA

T

j,

T

STG

SF10

AG

50

35

@ T

A

= 25°C unless otherwise specified

SF10

BG

100

70

SF10

CG

150

105

SF10

DG

200

140

SF10

FG

300

210

SF10

GG

400

280

SF10

HG

500

350

SF10

JG

600

420

Unit

V

A

1.0

30

0.95

10

100

35

75

-65 to +150

40

50

1.3

1.5

V

mA

ns

pF

K/W

°C

Notes:

1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Measured with I

F

= 0.5A, I

R

= 1.0A, Irr = 0.25A. (See Figure 5)

DS24012 Rev. A1-2

1 of 2

www.diodes.com

SF10AG - SF10JG

ã

Diodes Incorporated

SF10HGT Related Products

	SF10HGT	SF10BGT	SF10JGT	SF10DGT	SF10FGT	SF10GGT
Description	1A, 500V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2	1A, 100V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2	1A, 600V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2	1A, 200V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2	1A, 300V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2	1A, 400V, SILICON, SIGNAL DIODE, DO-41, PLASTIC PACKAGE-2
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Contacts	2	2	2	2	2	2
Reach Compliance Code	unknown	compliant	compliant	unknown	unknown	compliant
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
JESD-609 code	e3	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1	1
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	500 V	100 V	600 V	200 V	300 V	400 V
Maximum reverse recovery time	0.05 µs	0.035 µs	0.05 µs	0.035 µs	0.04 µs	0.04 µs
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	40	40	40	40	40	40

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