2SK2938(L),2SK2938(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-561B (Z)
3rd. Edition
Jun 1998
Features
•
Low on-resistance
R
DS
=0.026
Ω
typ.
•
High speed switching
•
4V gate drive device can be driven from 5V source
Outline
LDPAK
4
4
D
G
1
2
1
2
3
3
S
1. Gate
2. Drain
3. Source
4. Drain
2SK2938(L),2SK2938(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
60
±20
25
100
25
20
34
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50Ω
2
2SK2938(L),2SK2938(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
60
±20
—
—
1.5
—
—
11
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.026
0.045
17
740
380
140
10
160
100
150
0.95
40
Max
—
—
±10
10
2.5
0.034
0.07
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 25A, V
GS
= 0
I
F
= 25A, V
GS
= 0
diF/ dt =50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
GS
=
±16V,
V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V
Note4
I
D
= 15A, V
GS
= 4V
Note4
I
D
= 15A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
D
= 15A, V
GS
= 10V
R
L
= 2Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3
2SK2938(L),2SK2938(S)
Main Characteristics
Power vs. Temperature Derating
80
Pch (W)
200
100
Maximum Safe Operation Area
10
PW
10
0
µs
µs
60
I
D
(A)
50
20
10
5
2
1
0.5
1
10
m
pe
D
m
C
s
=
O
Channel Dissipation
Drain Current
s(
40
ra
t
t
ho
1s
)
c=
io
n
20
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
(T
25
°
C)
0
50
100
150
200
0.2
0.1
Case Temperature Tc (°C)
0.3
1
3
10
Drain to Source Voltage V
30
(V)
DS
100
50
Typical Output Characteristics
10 V
6V
5V
I
D
(A)
Typical Transfer Characteristics
20
V
DS
= 10 V
Pulse Test
40
I
D
(A)
Pulse Test
4.5 V
4V
16
30
12
Drain Current
20
3.5 V
10
V
GS
= 3 V
Drain Current
8
25°C
Tc = 75°C
4
–25°C
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
0
1
2
3
Gate to Source Voltage V
4
(V)
GS
5
4
2SK2938(L),2SK2938(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
0.8
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(
W
)
1.0
0.5
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
0.2
0.6
I
D
= 15 A
10 A
0.2
5A
0.1
0.4
0.05
V
GS
= 4 V
10 V
0.02
0.01
0
12
4
8
Gate to Source Voltage
16
V
GS
(V)
20
0.1 0.2
5 10 20
0.5 1 2
Drain Current I
D
(A)
50
Static Drain to Source on State Resistance
R
DS(on)
(
W
)
Pulse Test
0.08
10 A
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.10
50
20
10
5
2
1
0.5
0.1
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
0.06
V
GS
= 4 V
0.04
25 °C
75 °C
2, 5 A
2, 5, 10 A
0.02
10 V
0
–40
0
40
80
Case Temperature Tc
120
(°C)
160
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
Drain Current I
D
(A)
100
5
stm32/stm8
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