2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-568B (Z)
3rd. Edition
Jun 1998
Features
•
Low on-resistance
R
DS(on)
= 5.5mΩ typ.
•
4V gate drive devices.
•
High speed switching
Outline
LDPAK
4
D
4
1
G
1
2
3
2
3
S
1. Gate
2. Drain
3. Source
4. Drain
2SK2958(L),2SK2958(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
30
±20
75
300
75
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
30
±20
—
—
1.0
—
—
35
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
5.5
9.0
60
4100
2700
800
45
430
460
440
1.0
90
Max
—
—
10
±10
2.0
7.0
14.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 75A, V
GS
= 0
I
F
= 75A, V
GS
= 0
diF/ dt =50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
GS
=
±16V,
V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 40A, V
GS
= 10V
Note3
I
D
= 40A, V
GS
= 4V
Note3
I
D
= 40A, V
DS
= 10V
Note3
V
DS
= 10V
V
GS
= 0
f = 1MHz
V
GS
= 10V, I
D
= 40A
R
L
= 0.25Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
3. Pulse test
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
2
2SK2958(L),2SK2958(S)
Main Characteristics
Power vs. Temperature Derating
160
1000
300
Pch (W)
I
D
(A)
Maximum Safe Operation Area
10
µ
PW
120
100
30
10
3
1
0.3
0
1 m
µs
=1
s
0m
DC
s
(1
Op
sh
era
ot)
(T ti
c = on
25
°C
)
10
s
Channel Dissipation
80
Drain Current
40
Operation in
this area is
limited by R
DS(on)
0
50
100
150
200
Case Temperature Tc (°C)
0.1 Ta = 25°C
3
0.1 0.3
1
10
Drain to Source Voltage V
30
(V)
DS
100
Typical Output Characteristics
Typical Transfer Characteristics
100
V
GS
= 10 V
6V
5V
4V
100
Pulse Test
I
D
(A)
80
I
D
(A)
80
V
DS
= 10 V
Pulse Test
3.5 V
60
60
25°C
75°C
20
Tc = –25°C
Drain Current
40
Drain Current
3V
40
20
2.5 V
0
2
4
6
Drain to Source Voltage V
8
(V)
DS
10
0
1
2
3
Gate to Source Voltage V
4
(V)
GS
5
3
2SK2958(L),2SK2958(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(m
W
)
50
0.5
Pulse Test
Pulse Test
20
0.4
0.3
I
D
= 50 A
10
V
GS
= 4 V
10 V
0.2
20 A
10 A
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
5
0.1
2
1
1
3
10
30
100 300
Drain Current I
D
(A)
1000
Static Drain to Source on State Resistance
R
DS(on)
(m
W
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I
D
= 50 A
12
V
GS
= 4 V
8
10, 20 A
4
0
–40
10 V
50 A
20 A
10 A
Forward Transfer Admittance vs.
Drain Current
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
Drain Current I
D
(A)
100
75 °C
25 °C
Tc = –25 °C
V
DS
= 10 V
Pulse Test
0
40
80
120
160
Case Temperature Tc (°C)
4
2SK2958(L),2SK2958(S)
Body–Drain Diode Reverse
Recovery Time
1000
100000
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
200
100
50
20
10
0.1
30000
10000
3000
1000
Crss
300
100
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
V
GS
= 0
f = 1 MHz
Ciss
Coss
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
50
I
D
= 75 A
V
GS
V
DD
= 5 V
10 V
25 V
V
DS
20
5000
2000
Switching Characteristics
V
GS
= 10 V, V
DD
= 10 V
PW = 5 µs, duty < 1 %
t d(off)
tf
tr
t d(on)
Switching Time t (ns)
40
16
1000
500
200
100
50
20
10
Drain to Source Voltage
30
12
20
8
10
V
DD
= 25 V
10 V
5V
80
160
240
320
Gate Charge Qg (nc)
4
0
400
Gate to Source Voltage
0
5
5 10 20 50 100
0.1 0.2 0.5 1 2
Drain Current I
D
(A)
5
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