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GBU1002HX0G

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size208KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

GBU1002HX0G Overview

Bridge Rectifier Diode,

GBU1002HX0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSFM-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage100 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current220 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
GBU1001 - GBU1007
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
- Ideal for printed circuit board
- High case dielectric strength of 1500 VRMS
- High surge current capability
- Typical I
R
less than 0.1μA
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
GBU
MECHANICAL DATA
Case:
GBU
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Polarity:
As marked
Weight:
4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current,
8.3 ms single half sine-wave
Rating of fusing ( t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 5 A
I
F
= 10 A
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
GBU
1001
50
35
50
GBU
1002
100
70
100
GBU
1003
200
140
200
GBU
1004
400
280
400
10
220
200
1.0
1.1
5
500
211
2
21
- 55 to +150
- 55 to +150
94
GBU
1005
600
420
600
GBU
1006
800
560
800
GBU
1007
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
C
J
R
θJC
R
θJA
T
J
T
STG
μA
pF
°C/W
°C
°C
Typical junction capacitance per leg (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1MHz and applied Reverse bias of 4.0V DC
Document Number: DS_D1409018
Version: J15
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