Power F-MOS FETs
2SK3049
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed
q
High-speed switching
q
Low ON-resistance
q
No secondary breakdown
unit: mm
9.9±0.3
4.6±0.2
2.9±0.2
s
Applications
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
15.0±0.5
φ3.2±0.1
13.7±0.2
4.2±0.2
1.4±0.2
1.6±0.2
0.8±0.1
3.0±0.5
2.6±0.1
0.55±0.15
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
600
±30
±5
±10
62.5
40
2
150
−55
to +150
Unit
V
V
A
A
mJ
W
°C
°C
1
2
2.54±0.3
3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25°C
Ta = 25°C
L = 5mH, I
L
= 5A, 1 pulse
s
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 200V, I
D
= 3A
V
GS
= 10V, R
L
= 66.6Ω
Conditions
V
DS
= 480V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
1200
V
DS
= 20V, V
GS
= 0, f = 1MHz
140
40
20
30
150
50
1.7
600
2
0.85
3.4
−1.6
5
1.5
min
typ
max
100
±1
Unit
µA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
1
Power F-MOS FETs
Area of safe operation (ASO)
100
30
10
t=1ms
3
1
0.3
100ms
0.1
0.03
0.01
1
3
10
30
100
300
1000
DC
10ms
60
2SK3049
P
D
Ta
10
(1) T
C
=Ta
(2) Without heat sink
IAS max.
IAS
L-load
T
C
=25˚C
Allowable power dissipation P
D
(W)
Non repetitive pulse
T
C
=25˚C
Avalanche current IAS (A)
50
3
62.5mJ
Drain current I
D
(A)
40
(1)
30
1
0.3
20
0.1
10
(2)
0
0
20
40
60
80 100 120 140 160
0.03
0.01
0.1
0.3
1
3
10
Drain to source voltage V
DS
(V)
Ambient temperature Ta (˚C)
L-load (mH)
I
D
V
GS
V
DS
=25V
R
DS(on)
I
D
Drain to source ON-resistance R
DS(on)
(
Ω
)
2.5
5
| Y
fs
|
I
D
Forward transfer admittance |Y
fs
| (S)
V
GS
=10V
V
DS
=25V
T
C
=0˚C
4
25˚C
100˚C
3
10
8
2.0
T
C
=100˚C
Drain current I
D
(A)
T
C
=100˚C
6
1.5
25˚C
1.0
0˚C
4
25˚C
0˚C
2
2
0.5
1
0
0
2
4
6
8
10
0
0
2
4
6
8
0
0
2
4
6
8
Gate to source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
R
th(t)
t
10
2
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
10
(2)
1
10
–1
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
2
京公网安备 11010802033920号
EEWORLD
