This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3046
Silicon N-channel power MOSFET
■
Features
•
Avalanche energy capability guaranteed: EAS
>
130 mJ
•
Gate-source surrender voltage V
GSS
:
±30
V guaranteed
•
High-speed switching
•
No secondary breakdown
•
Non-contact relay
•
Solenoid drive
•
Motor drive
•
Control equipment
•
Switching mode regulator
Unit: mm
9.9
±0.3
4.6
±0.2
2.9
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
■
Applications
13.7
±0.2
4.2
±0.2
Solder Dip
15.0
±0.5
φ
3.2
±0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
Rating
Drain-source surrender voltage
V
DSS
500
Gate-source surrender voltage
V
GSS
±30
Drain current
I
D
±7
Peak drain current
I
DP
±14
Avalanche energy capability
*
EAS
130
Power dissipation
P
D
40
T
a
=
25°C
2
Channel temperature
T
ch
150
Storage temperature
T
stg
−55
to
+150
Note) *: L
=
5.4 mH, I
L
=
7 A, 1 pulse
/D
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Symbol
V
DSS
I
DSS
I
GSS
V
th
Y
fs
R
DS(on)
V
DF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
ue
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Diode forward voltage
Short-circuit forward transfer capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
Fall time
Turn-off delay time
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJG00023BED
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0.8
±0.1
0.55
±0.15
2.54
±0.30
5.08
±0.50
1.4
±0.2
1.6
±0.2
3.0
±0.5
2.6
±0.1
Unit
V
V
A
A
mJ
W
°C
°C
1
2
3
1: Gate
2: Drain
3: Source
TO-220D-A1 Package
Marking Symbol: K3046
Internal Connection
D
G
S
Conditions
I
D
=
1 mA, V
GS
=
0
V
DS
=
400 V, V
GS
=
0
V
GS
= ±30
V, V
DS
=
0
V
DS
=
25 V, I
D
=
1 mA
V
DS
=
25 V, I
D
=
4 A
V
GS
=
10 V, I
D
=
4 A
isc
on
Min
500
tin
Typ
Max
100
±1
5.0
Unit
V
µA
µA
V
S
Ω
ce
an
2.0
3.0
Ma
int
en
5.0
0.7
1.0
I
DR
=
7 A, V
GS
=
0
V
DS
=
20 V, V
GS
=
0, f
=
1 MHz
−1.6
1 200
160
70
V
pF
pF
pF
ns
ns
ns
ns
3.1
62.5
°C/W
°C/W
V
DD
=
150 V, I
D
=
5 A, R
L
=
30
Ω
V
GS
=
10 V
30
70
60
140
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
Embedded System
京公网安备 11010802033920号
EEWORLD
