1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
Rev. 06 — 21 December 2006
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection.
Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
1PS76SB21
BAT721
BAT721A
BAT721C
BAT721S
SOD323
SOT23
SOT23
SOT23
SOT23
JEITA
SC-76
-
-
-
-
single
single
dual common anode
dual common cathode
dual series
Configuration
Type number
1.2 Features
I
Low forward voltage
I
Small SMD plastic packages
I
Low capacitance
1.3 Applications
I
I
I
I
Ultra high-speed switching
Voltage clamping
Line termination
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 200 mA
[1]
Conditions
Min
-
-
-
Typ
-
-
-
Max
200
40
550
Unit
mA
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
2. Pinning information
Table 3.
Pin
1PS76SB21
1
2
cathode
anode
[1]
Pinning
Description
Simplified outline
Symbol
1
2
1
2
sym001
BAT721
1
2
3
anode
not connected
cathode
1
2
006aaa144
3
1
3
2
n.c.
006aaa436
BAT721A
1
2
3
cathode (diode 1)
cathode (diode 2)
anode (diode 1),
anode (diode 2)
1
2
006aaa144
3
1
3
2
006aaa439
BAT721C
1
2
3
anode (diode 1)
anode (diode 2)
cathode (diode 1),
cathode (diode 2)
1
2
006aaa144
3
1
3
2
006aaa438
BAT721S
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
1
2
006aaa144
3
1
3
2
006aaa437
[1]
The marking bar indicates the cathode.
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
2 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
3. Ordering information
Table 4.
Ordering information
Package
Name
1PS76SB21
BAT721
BAT721A
BAT721C
BAT721S
SC-76
-
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 3 leads
Version
SOD323
SOT23
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
S1
L7*
L8*
L9*
L0*
Type number
1PS76SB21
BAT721
BAT721A
BAT721C
BAT721S
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FSM
reverse voltage
forward current
non-repetitive peak forward
current
junction temperature
ambient temperature
storage temperature
half sine wave;
JEDEC method;
t
p
= 8.3 ms
-
-
-
40
200
1
V
mA
A
Parameter
Conditions
Min
Max
Unit
T
j
T
amb
T
stg
-
−65
−65
125
+150
+150
°C
°C
°C
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
3 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
6. Thermal characteristics
Table 7.
Symbol
Per diode
R
th(j-a)
thermal resistance from
junction to ambient
1PS76SB21
BAT721
BAT721A
BAT721C
BAT721S
[1]
Thermal characteristics
Parameter
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
450
500
500
500
500
K/W
K/W
K/W
K/W
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
[1]
[1]
[1]
[1]
Parameter
Conditions
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
40
Max
300
420
550
15
3
50
Unit
mV
mV
mV
µA
mA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 30 V
V
R
= 30 V; T
j
= 100
°C
V
R
= 0 V; f = 1 MHz
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
4 of 11
NXP Semiconductors
1PS76SB21; BAT721 series
Schottky barrier diodes in small packages
10
3
I
F
(mA)
10
2
006aaa689
I
R
(mA)
10
(1)
006aaa690
1
(2)
10
−1
10
−2
10
−3
10
−4
10
−5
(4)
(1)
(2)
(3)
(4)
(3)
10
1
10
−1
0
200
400
V
F
(mV)
600
10
−6
0
10
20
30
V
R
(V)
40
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
10
2
Fig 2. Reverse current as a function of reverse
voltage; typical values
mbk574
C
d
(pF)
10
1
0
10
20
30
V
R
(V)
40
T
amb
= 25
°C;
f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values
1PS76SB21_BAT721_SER_6
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 21 December 2006
5 of 11
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