SILICON HYPERABRUPT
TUNING DIODES
•
High capacitance ratios
•
Linear tuning between 2 and 8 volts
•
Available over a broad range junction capacitances
•
Satisfies a large number of broadband applications thru the VHF frequency band
KSV1401 - KSV1412
DIODE CAPACITANCE
(CT)
pF @ 1V•1 MHz
pF @ 2V•1
MHz
MIN
MAX
MIN
MAX
440
660
45
69
140
210
96
144
200
300
80
120
54
82
37
57
26
40
17
27
12
18
8
12
TUNING RATIO (TR)
C•1V / C•10V C•2V / C•10V
@ 1 MHz @ 1 MHz
MIN
MIN
14:1
10:1
10:1
10:1
10:1
10:1
10:1
10:1
10:1
9.5:1
8.5:1
7.5:1
QUALITY FACTOR
Q
@ 2V • 1 MHz
MIN
200
200
200
200
200
200
200
200
200
200
200
200
PART
NUMBER
KSV1401
KSV1402
KSV1403
KSV1404
KSV1405
KSV1406
KSV1407
KSV1408
KSV1409
KSV1410
KSV1411
KSV1412
Package Style
Device Dissipation (P
D
)
Junction Temperature (T
J
)
Reverse Breakdown Voltage (V
BR
)
Max Reverse Leakage Current (I
R
)
Operating Temperature (Topr)
Storage Temperature (Tstg)
Capacitance Tolerance
TA = 25°C
10 µAdc
Vr = 10 Vdc
Standard Device
Suffix A
Suffix B
DO-7
400 mW
175°C
12 Vdc Min
0.1 µAdc
-55° to + 150°C
-65° to + 200°C
± 20%
± 10%
± 5%
To order devices screened to MIL-PRF-19500 JANTX level, Appendix E, Table IV add suffix H.
P.O. BOX 609
•
ROCKPORT, MAINE 04856
•
207-236-6076
•
FAX 207-236-9558
Embedded System
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