UPD4482321GF-A65Y-A datasheet, PDF

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UPD4482321GF-A65Y-A: DescriptionCache SRAM, 256KX32, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100; Categorystorage storage; File Size371KB，28 Pages; ManufacturerNEC Electronics

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UPD4482321GF-A65Y-A Overview

Cache SRAM, 256KX32, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

UPD4482321GF-A65Y-A Parametric

Parameter Name	Attribute value
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	6.5 ns
Other features	FLOW-THROUGH ARCHITECTURE
JESD-30 code	R-PQFP-G100
JESD-609 code	e6
length	20 mm
memory density	8388608 bit
Memory IC Type	CACHE SRAM
memory width	32
Number of functions	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX32
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.7 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm
Base Number Matches	1

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD4482161, 4482181, 4482321, 4482361

8M-BIT CMOS SYNCHRONOUS FAST SRAM

FLOW THROUGH OPERATION

Description

The

PD4482161 is a 524,288-word by 16-bit, the

PD4482181 is a 524,288-word by 18-bit, the

PD4482321 is a

262,144-word by 32-bit and the

PD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with

advanced CMOS technology using Full-CMOS six-transistor memory cell.

The

PD4482161,

PD4482181,

PD4482321 and

PD4482361 integrate unique synchronous peripheral circuitry, 2-bit

burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single

clock input (CLK).

The

PD4482161,

PD4482181,

PD4482321 and

PD4482361 are suitable for applications which require synchronous

operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In

the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.

The

PD4482161,

PD4482181,

PD4482321 and

PD4482361 are packaged in 100-pin PLASTIC LQFP with a 1.4

mm package thickness for high density and low capacitive loading.

Features

•

3.3 V or 2.5 V core supply

•

Synchronous operation

•

Operating temperature : T

= 0 to 70

°C

(-A65, -A75, -A85, -C75, -C85)

−40

+85 °C

(-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)

•

Internally self-timed write control

•

Burst read / write : Interleaved burst and linear burst sequence

•

Fully registered inputs for flow through operation

•

All registers triggered off positive clock edge

•

3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs

•

Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)

•

Asynchronous output enable : /G

•

Burst sequence selectable : MODE

•

Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

•

Separate byte write enable : /BW1 to /BW4, /BWE (

PD4482321,

PD4482361)

/BW1, /BW2, /BWE (

PD4482161,

PD4482181)

Global write enable : /GW

•

Three chip enables for easy depth expansion

•

Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M14521EJ3V0DS00 (3rd edition)

Date Published December 2002 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2000

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