A21-1 datasheet, PDF - EEWORLD Datasheet

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A21-1: DescriptionWide Band Low Power Amplifier, 10MHz Min, 1200MHz Max, 1 Func, TO-8, 4 PIN; CategoryWireless rf/communication Radio frequency and microwave; File Size102KB，1 Pages; ManufacturerMACOM; Websitehttp://www.macom.com

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A21-1 Overview

Wide Band Low Power Amplifier, 10MHz Min, 1200MHz Max, 1 Func, TO-8, 4 PIN

A21-1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CAN4,.3
Reach Compliance Code	compliant
Other features	LOW NOISE, HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	13.5 dB
Maximum input power (CW)	13 dBm
Number of functions	1
Number of terminals	4
Maximum operating frequency	1200 MHz
Minimum operating frequency	10 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-54 °C
Package body material	METAL
Encapsulate equivalent code	CAN4,.3
power supply	15 V
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum slew rate	11 mA
Maximum voltage standing wave ratio	2
Base Number Matches	1

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A21-1/SMA21-1

5 TO 1200 MHz

CASCADABLE AMPLIFIER

· LOW NOISE: <2.8 dB (TYP.)

· LOW VSWR: 1.5:1 (TYP.)

· HIGH SINGLE STAGE GAIN: 15 dB (TYP.)

Typical Performance @ 25°C

Specifications (Rev. Date: 1/01)*

Characteristics

Frequency

Small Signal Gain (min.)

Gain Flatness (max.)

Reverse Isolation

Noise Figure (max.)

Power Output @ 1 dB comp. (min.)

IP3

IP2

Second Order Harmonic IP

VSWR Input / Output (max.)

DC Current @ 15 Volts (max.)

Typical

0° to 50°C

°

Guaranteed

-54° to +85°C

°

0.0-1.3 GHz

15.5 dB

±0.3 dB

20 dB

2.4 dB

-1.0 dBm

+11 dBm

+17 dBm

1.4:1 / 1.4:1

10 mA

0.0-1.2 GHz

14.0 dB

±0.5 dB

3.5 dB

-2.0 dBm

0.0-1.2 GHz

13.5 dB

±1.0 dB

3.9 dB

-3.0 dBm

1.9:1 / 1.9:1

11 mA

2.0:1 / 2.0:1

12 mA

* Measured in a 50-ohm system at +15 Vdc Nominal. Subject to change without notice.

Absolute Maximum Ratings

Storage Temperature

Max. Case Temperature

Max. DC Voltage

Max. Continuous RF Input Power

Max. Short Term RF Input Power (1 minute max.)

Max. Peak Power (3

µsec

max.)

“S” Series Burn-in Temperature (Case)

-62° to +125°C

125°C

+17 Volts

+13 dBm

50 mW

0.5 W

125°C

Thermal Data: V

cc

= 15 Vdc

Thermal Resistance

θ

jc

Transistor Power Dissipation P

d

Junction Temperature Rise Above Case T

jc

171°C/W

0.053 W

9°C

Outline Drawings

Package

Figure

Model

TO-8

BG

A21-1

Surface Mount

AA

SMA21-1

SMA Connectorized

CE

CA21-1

Specifications subject to change without notice.

•

North America: 1-800-366-2266

Visit www.macom.com for complete contact and product information.

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