BAS40-HT3 to BAS40-06-HT3
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on
voltage and fast switching.
e3
• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Space saving LLP package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Top view
Pin 1
BAS40-HT3
3
BAS40-06-HT3
3
Top View
1
2
1
2
BAS40-05-HT3
BAS40-04-HT3
3
Mechanical Data
Case:
LLP75-3B Plastic case
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight:
approx. 5.2 mg
1
17008
3
Top View
2
1
2
Parts Table
Part
BAS40-HT3
BAS40-04-HT3
BAS40-05-HT3
BAS40-06-HT3
Ordering code
BAS40-HT3-GS08
BAS40-04-HT3-GS08
BAS40-05-HT3-GS08
BAS40-06-HT3-GS08
43
44
45
46
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
T
amb
= 25 °C
t
p
< 1 s, T
amb
= 25 °C
T
amb
= 25 °C
Test condition
Symbol
V
RRM
I
F
I
FSM
P
tot
Value
40
200
600
200
Unit
V
mA
mA
mW
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
Test condition
Symbol
R
thJA
T
j
T
S
Value
430
125
- 55 to +125
Unit
°C/W
°C
°C
Document Number 85688
Rev. 1.5, 15-Apr-05
www.vishay.com
1
BAS40-HT3 to BAS40-06-HT3
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current
Forward voltage
Test condition
I
R
= 10
µA
(pulsed)
Pulse test V
R
= 30 V, t
p
< 300
µs
Pulse test t
p
< 300
µs,
I
F
= 1.0 mA
Pulse test t
p
< 300
µs,
I
F
= 40 mA,
Diode capacitance
Reverse recovery time
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1 mA, R
L
= 100
Ω
Symbol
V
(BR)
I
R
V
F
V
F
C
tot
t
rr
4.0
Min
40
20
100
380
1000
5
5
Typ.
Max
Unit
V
nA
mV
mV
pF
ns
Package Dimensions in mm (Inches)
1 (0.039)
0.3 (0.012)
1
0.4 (0.016)
2
3
0.3 (0.012)
1 (0.039)
0.7 (0.027)
0.15 (0.006)
0.25 (0.010)
1.6 (0.062)
ISO Method E
1.6 (0.062)
Top View
18057
www.vishay.com
2
Document Number 85688
Rev. 1.5, 15-Apr-05
BAS40-HT3 to BAS40-06-HT3
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85688
Rev. 1.5, 15-Apr-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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