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GBI20D

Description
Bridge Rectifier Diode, 1 Phase, 20A, 200V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size282KB,2 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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GBI20D Overview

Bridge Rectifier Diode, 1 Phase, 20A, 200V V(RRM), Silicon

GBI20D Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSIP-T4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-T4
JESD-609 codee2
Maximum non-repetitive peak forward current250 A
Number of components4
Phase1
Number of terminals4
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
GBI 20A ... GBI 20M
®
Diotec Line
Silicon-Bridge Rectifiers
Silizium-Brückengleichrichter
Forward current – Durchlaßstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
20 A
50…1000 V
32 x 5.6 x 17 [mm]
9g
Mounting clamp BO 2
Befestigungsschelle BO 2
see page 28
siehe Seite 28
Maximum ratings
Type / Typ
Diotec
GBI 20A
GBI 20B
GBI 20D
GBI 20G
GBI 20J
GBI 20K
GBI 20M
Grenzwerte
Surge peak reverse volt.
Stoßspitzensperrspg.
V
RSM
[V]
1
)
80
130
250
450
700
1000
1200
Alternating input voltage Rep. peak reverse voltage
Eingangswechselspg.
Period. Spitzensperrspg.
V
VRMS
[V]
V
RRM
[V]
1
)
35
70
140
280
420
560
700
50
100
200
400
600
800
1000
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
A
= 25
/
C
T
A
= 25
/
C
T
A
= 25
/
C
I
FSM
250 A
I
FSM
i
2
t
275 A
330 A
2
s
– 50...+150
/
C
– 50...+150
/
C
T
j
T
S
1
) Valid for one branch – Gültig für einen Brückenzweig
F:\Data\Wp\DatBlatt\Einzelblätter\Sondertypen\gbi20a...wpd
1

GBI20D Related Products

GBI20D GBI20B GBI20G GBI20K GBI20M
Description Bridge Rectifier Diode, 1 Phase, 20A, 200V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 20A, 100V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 20A, 400V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 20A, 1000V V(RRM), Silicon
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
Reach Compliance Code unknown unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
JESD-609 code e2 e2 e2 e2 e2
Maximum non-repetitive peak forward current 250 A 250 A 250 A 250 A 250 A
Number of components 4 4 4 4 4
Phase 1 1 1 1 1
Number of terminals 4 4 4 4 4
Maximum output current 20 A 20 A 20 A 20 A 20 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 100 V 400 V 800 V 1000 V
surface mount NO NO NO NO NO
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 - -
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