GP500LSS06S
GP500LSS06S
Single Switch IGBT Module
Replaces October 2001 version, DS4324-6.0
DS4324-7.0 April 2002
FEATURES
s
s
s
s
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C25
I
C75
I
C(PK)
(typ)
600V
2.2V
(max) 700A
(max) 500A
(max) 1400A
n - Channel
High Switching Speed
Low Forward Voltage Drop
Isolated Base
APPLICATIONS
s
s
PWM Motor Contro
l
UPS
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP500LSS06S is a single switch 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
5
2(E)
5(E
1
)
3(G
1
)
1(C)
4(C
1
)
Fig. 1 Single switch circuit diagram
4
2
1
ORDERING INFORMATION
Order as:
GP500LSS06S
Note: When ordering, use complete part number.
3
Outline type code:
L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com
GP500LSS06S
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC, T
case
= 25˚C
DC, T
case
= 75˚C
I
C(PK)
1ms, T
case
= 25˚C
1ms, T
case
= 75˚C
P
max
V
isol
Maximum power dissipation
Isolation voltage
(Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
V
GE
= 0V
-
Test Conditions
Max.
600
±20
700
500
1400
1000
2500
2500
Units
V
V
A
A
A
A
W
V
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - Case to heatsink
Junction temperature
Conditions
DC junction to case
DC junction to case
-
Min.
-
-
-
-
-
-
Mounting - M6
Electrical connections - M4
Electrical connections - M6
- 40
-
-
-
Max.
50
125
15
150
125
125
5
2
5
Units
o
C/kW
C/kW
o
Mounting torque 5Nm (with mounting grease)
Transistor
Diode
o
C/kW
o
C
C
o
T
stg
-
Storage temperature range
Screw torque
o
C
Nm
Nm
Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP500LSS06S
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
j
= 125˚C
I
GES
V
GE(TH)
V
CE(SAT)†
Gate leakage current
Gate threshold voltage
V
GE
=
±20V,
V
CE
= 0V
I
C
=
20mA,
V
GE
= V
CE
V
GE
= 15V, I
C
= 500A
V
GE
= 15V, I
C
= 500A, T
j
= 125˚C
I
F
I
FM
V
F†
Diode forward current
Diode maximum forward current
Diode forward voltage
DC
t
p
= 1ms
I
F
= 500A,
I
F
= 500A, T
j
= 125˚C
C
ies
L
M
†
Min.
-
-
-
4
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.2
2.3
-
-
1.1
1.05
54000
15
Max.
25
100
2
7.5
2.8
2.9
500
1000
1.9
1.8
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
pF
nH
Collector-emitter saturation voltage
Input capacitance
Module inductance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Note:
Measured at the power busbars and not the auxiliary terminals.
* L is the circuit inductance + L
M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com
GP500LSS06S
INDUCTIVE SWITCHING CHARACTERISTICS
T
j
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
t
rr
Q
rr
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery time
Diode reverse recovery charge
I
F
= 500A
V
R
= 50%V
CES
, dI
F
/dt = 1500A/µs
I
C
= 500A
V
GE
=
±15V
V
CE
= 50% V
CES
R
G(ON)
= R
G(OFF)
= 5Ω
L ~ 100nH
-
-
-
-
-
490
225
30
225
20
-
-
-
-
-
ns
ns
mJ
ns
µC
Conditions
Min.
-
-
-
Typ.
1150
220
45
Max.
-
-
-
Units
µs
ns
mJ
T
j
= 125˚C unless stated otherwise.
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
t
rr
Q
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery time
Diode reverse recovery charge
I
F
= 500A
V
R
= 50%V
CES
, dI
F
/dt = 1500A/µs
I
C
= 500A
V
GE
=
±15V
V
CE
= 50% V
CES
R
G(ON)
= R
G(OFF)
= 5Ω
L ~ 100nH
-
-
-
-
-
550
320
50
310
28
-
-
-
-
-
ns
ns
mJ
ns
µC
-
-
-
1400
400
65
-
-
-
µs
ns
mJ
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP500LSS06S
TYPICAL CHARACTERISTICS
V
ge
= 20/15V
1000
900
V
case
measured at power busbars
ce
is
and not the auxiliary terminals
V
ge
= 20/15V
1000
900
Common emitter
T
case
= 125˚C
V
ce
is measured at power busbars
and not the auxiliary terminals
Common emitter
Common emitter
T
case
= 25˚C
T
= 25˚C
V
ge
= 12V
800
Collector current, I
c
- (A)
V
ge
= 12V
800
Collector current, I
c
- (A)
700
600
500
400
700
600
500
400
V
ge
= 10V
300
200
100
0
0
V
ge
= 10V
300
200
100
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, V
ce
- (V)
4.5
5
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, V
ce
- (V)
4.5
5
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
100
90
80
T
j
= 25˚C
V
GE
=
±15V
V
CE
= 300V
100
90
80
T
j
= 125˚C
V
GE
=
±15V
V
CE
= 300V
A
B
C
Turn-on energy, E
ON
- (mJ)
Turn-on energy, E
ON
- (mJ)
70
60
50
40
30
20
10
0
0
100
A: R
g
= 15Ω
B: R
g
= 10Ω
C: R
g
= 5Ω
300
400
200
Collector current, I
C
- (A)
500
B
C
A
70
60
50
40
30
20
10
0
0
100
A: R
g
= 15Ω
B: R
g
= 10Ω
C: R
g
= 5Ω
200
300
400
Collector current, I
C
- (A)
500
Fig.5 Typical turn-on energy vs collector current
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
www.dynexsemi.com
Embedded System
京公网安备 11010802033920号
EEWORLD
