GP2401ESM18
GP2401ESM18
Hi-Reliability Single Switch Low V
CE(SAT)
IGBT Module
Replaces February 2000 version, DS5345-1.0
DS5345-2.4 January 2001
FEATURES
s
s
s
s
Low V
CE(SAT)
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
2.6V
2400A
4800A
APPLICATIONS
External connection
s
s
s
s
High Reliability Inverters
Motor Controllers
Traction Drives
Low-Loss System Retrofits
G
Aux C
C1
C2
C3
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP2401ESM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
CE(SAT)
to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Aux E
E1
E2
External connection
E3
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
GP2401ESM18
Note: When ordering, please use the whole part number.
Outline type code:
E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
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GP2401ESM18
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
T
case
= 80˚C for T
j
= 125˚C
1ms, T
case
= 115˚C
T
case
= 25˚C, T
j
= 150˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
V
GE
= 0V
-
Test Conditions
Max.
1800
±20
2400
4800
20.8
4000
Units
V
V
A
A
kW
V
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance - transistor
Test Conditions
Continuous dissipation -
junction to case
R
th(j-c)
Thermal resistance - diode
Continuous dissipation -
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
T
j
Junction temperature
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M4
Electrical connections - M8
-
-
-
–40
-
-
-
150
125
125
5
2
10
˚C
˚C
˚C
Nm
Nm
Nm
-
6
˚C/kW
-
14
˚C/kW
Min.
-
Max.
6
Units
˚C/kW
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP2401ESM18
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125˚C
I
GES
V
GE(TH)
V
CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
=
±20V,
V
CE
= 0V
I
C
= 120mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 2400A
V
GE
= 15V, I
C
= 2400A, , T
case
= 125˚C
I
F
I
FM
V
F
Diode forward current
Diode maximum forward current
Diode forward voltage
DC
t
p
= 1ms
I
F
= 2400A
I
F
= 2400A, T
case
= 125˚C
C
ies
L
M
Input capacitance
Module inductance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.6
3.3
-
-
2.2
2.3
270
10
Max.
3
100
12
6.5
3.2
4
2400
4800
2.5
2.6
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
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GP2401ESM18
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 6000A/µs
Test Conditions
I
C
= 2400A
V
GE
=
±15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2Ω
L ~ 50nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
2050
350
1700
500
400
900
500
1000
350
Max.
2300
480
2000
750
600
1050
650
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 5000A/µs
Test Conditions
I
C
= 2400A
V
GE
=
±15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2Ω
L ~ 50nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
2250
350
2000
600
450
1400
850
1200
500
Max.
2600
500
2400
850
700
1600
1000
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP2401ESM18
TYPICAL CHARACTERISTICS
V
ge
= 20/15/12/10V
4800
4200
3600
Collector current, I
c
- (A)
V
ge
= 20/15/12/10V
4800
4200
3600
Common emitter
T
case
= 125˚C
Common emitter
T
case
= 25˚C
3000
2400
1800
1200
600
0
0
Collector current, I
c
- (A)
3000
2400
1800
1200
600
0
0
1.0
2.0
3.0
4.0
Collector-emitter voltage, V
ce
- (V)
5.0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
6.0
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
2.0
1.8
1.6
1.4
E
ON
Energy - (J)
4.5
T
case
= 125˚C
V
GE
= 15V
V
CE
= 900V
R
G
= 2.2
L = 50nH
E
OFF
4.0
3.5
3.0
T
case
= 125˚C
V
GE
= 15V
V
CE
= 900V
I
C
= 2400A
L = 50nH
E
ON
Energy - (J)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
E
REC
E
OFF
2.5
2.0
1.5
1.0
0.5
0
0
E
REC
400
1200
800
1600
Collector current, I
C
- (A)
2000
2400
1
2
3
5
6
7
4
Gate resistance, R
G
- (Ohms)
8
9
10
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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