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SIPC36AN40

Description
Power Field-Effect Transistor, 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size27KB,1 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

SIPC36AN40 Overview

Power Field-Effect Transistor, 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SIPC36AN40 Parametric

Parameter NameAttribute value
package instructionUNCASED CHIP, R-XUUC-N3
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
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