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M29W400DB70ZA6F

Description
256K X 16 FLASH 3V PROM, 70 ns, PBGA48
Categorystorage    storage   
File Size310KB,48 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M29W400DB70ZA6F Overview

256K X 16 FLASH 3V PROM, 70 ns, PBGA48

M29W400DB70ZA6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48
Contacts48
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length9 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,7
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width6 mm
M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
– V
CC
= 2.7 V to 3.6 V for Program, Erase
and Read
Access time: 45, 55, 70 ns
Programming time
– 10 µs per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– ECOPACK
®
packages
FBGA
SO44 (M)
(1)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZA)
(1)
6 x 9 mm
TFBGA48 (ZE)
6 x 8 mm
1. These packages are no more in mass production.
August 2007
Rev 5
1/48
www.st.com
1

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